Zobrazeno 1 - 10
of 336
pro vyhledávání: '"Ilango, S."'
The present study reports Al induced crystallization (AIC) of amorphous (a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 degree C. In addition to crystallization, the isothermal annealing of a-SiGe/AlOx/Al/corning-glass (CG) structure was
Externí odkaz:
http://arxiv.org/abs/1905.02986
Publikováno v:
Diamond and related Materials (2019)
The present study reports on an innovative method to prepare discrete diamond nanoparticles or nanodiamonds (NDs) with high structural and optical quality through top-down approach by controlled oxidation of pre-synthesized nanocrystalline diamond (N
Externí odkaz:
http://arxiv.org/abs/1901.02690
Publikováno v:
In Materials Today: Proceedings 2023 81 Part 2:926-930
Publikováno v:
In Procedia Computer Science 2023 218:2123-2132
Autor:
Taurshia, Antony, Kathrine, G. Jaspher Willsie, Souri, Alireza, Vinodh, S.E., Vimal, S., Li, Kuan-Ching, Ilango, S. Sudhakar
Publikováno v:
In Sustainable Computing: Informatics and Systems December 2022 36
Autor:
Tah, Twisha, Singh, Ch. Kishan, Amirthapandian, S., Madapu, K. K., Sagdeo, A., Ilango, S., Mathews, T., Dash, S.
We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500 {\deg}C. The pristine thin film was deposited using electron beam
Externí odkaz:
http://arxiv.org/abs/1712.01036
Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition
Autor:
Ghosh, Subrata, Ganesan, K., Polaki, S. R., Ilango, S., Amirthapandian, S., Dhara, S., Kamruddin, M., Tyagi, A. K.
Publikováno v:
RSC Adv., 5, 91922-91931 (2015)
Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. F
Externí odkaz:
http://arxiv.org/abs/1704.02165
Publikováno v:
Phys. Chem. Chem. Phys., 18, (2016) 22160-22167
Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) has been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominanc
Externí odkaz:
http://arxiv.org/abs/1607.04482
Publikováno v:
In Applied Surface Science 1 March 2021 541
Publikováno v:
In Materials Chemistry and Physics 15 January 2021 258