Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ilan A. Blech"'
Publikováno v:
Metallurgical and Materials Transactions A. 43:3411-3422
A paper, ‘‘The Microstructure of Rapidly Solidified Al6Mn,’’ [1] was submitted for publication in October 1984 by D. Shechtman and I. Blech to the Metallurgical Transactions A (now Metallurgical and Materials Transactions) after having been r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::664b5a6e3e29d96f3e43e27737150d8d
https://doi.org/10.1007/s11661-012-1323-1
https://doi.org/10.1007/s11661-012-1323-1
Publikováno v:
Journal of Applied Physics. 67:734-738
Thermal expansion coefficients and biaxial elastic moduli of the sputtered W, WNx, WSi0.45, and WSi0.67N0.10 thin films, used as refractory gate in the self‐aligned metal‐semiconductor field effect transistors on GaAs, were determined by insitu s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0227f4f71e9dbb920334c94d5b159049
https://doi.org/10.1063/1.345779
https://doi.org/10.1063/1.345779
Publikováno v:
Journal of Applied Physics. 97:113525
Thin films deposited on wafers show, in some cases, large variations in stress. The local curvature is often used in the Stoney equation [G. G. Stoney, Proc. R. Soc. London, Ser. A 82, 172 (1909)] to calculate the local stress. This practice leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf823a988c93797a37f9c4ef92e8aac1
https://doi.org/10.1063/1.1925328
https://doi.org/10.1063/1.1925328
Autor:
Peter Wood, Ilan A. Blech
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:728-729
Diamondlike carbon films were deposited on silicon, gallium arsenide and aluminum substrates using ion‐assisted chemical vapor deposition. The stress of these films was measured as a function of temperature between 25 and 150 °C. Using the stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546a44fd999cacbe292b6e6718f497b7
https://doi.org/10.1116/1.578800
https://doi.org/10.1116/1.578800
Autor:
J.-D.T. Pan, Ilan A. Blech
Publikováno v:
Journal of Applied Physics. 55:2874-2880
The stress of thin film tantalum silicide, titanium silicide, and tungsten silicide was measured in situ during sintering. These refractory metal silicide films were cosputtered on oxidized silicon, quartz, and sapphire substrates. The films were hea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a84a04c88805c44532deef7deee1ac9b
https://doi.org/10.1063/1.333326
https://doi.org/10.1063/1.333326
Publikováno v:
Journal of Applied Physics. 57:516-520
Recently, it has been shown that images can be formed in darkness by placing surfaces of silicon or other materials in contact with sensitive photographic films such as Ilford Nuclear Emulsion G5 or L4. These ‘‘chemographic’’ images are obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e441f4902cfa2172f136881c335e038
https://doi.org/10.1063/1.334785
https://doi.org/10.1063/1.334785
Autor:
Eugene S. Meieran, Ilan A. Blech
Publikováno v:
Journal of Applied Physics. 36:3162-3167
Diffraction topographs of oxidized silicon wafers made by the extinction contrast technique show extremely high intensity being diffracted from the silicon surface directly under steps etched in the oxide. Edges of metal or dielectric films evaporate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c826418a3affbfd3889a1cdeb3dd8b2
https://doi.org/10.1063/1.1702943
https://doi.org/10.1063/1.1702943
Autor:
Ilan A. Blech, Eugene S. Meieran
Publikováno v:
Applied Physics Letters. 11:263-266
The process of electrotransport in Al thin films was directly observed by transmission electron microscopy. As expected, it was seen that hole formation occured in regions where the electron flow was in the direction of increasing temperature. Hilloc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082c03f7e5366dc17a5bee311f490c0e
https://doi.org/10.1063/1.1755127
https://doi.org/10.1063/1.1755127
Autor:
Ilan A. Blech, Eugene S. Meieran
Publikováno v:
Philosophical Magazine. 14:275-288
A reflection and transmission x-ray study of single crystal NiO was made below the Neel temperature. Anti-ferromagnetic domains separated by several types of twin boundaries were clearly observed. The indices of diffraction planes which must be used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5709a4f9e54b1d99180e9fae8c24237
https://doi.org/10.1080/14786436608219011
https://doi.org/10.1080/14786436608219011
Autor:
Ilan A. Blech, Eugene S. Meieran
Publikováno v:
Journal of Applied Physics. 38:3495-3508
X‐ray topographs of annealed Si web dendrite showed the presence of immense stacking faults lying parallel to the web surface. In all cases, the faults were bounded by 〈112〉 partial dislocations, which formed many unusual and complex dislocatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaadfa2a1c9ddf511702ead05cd8d74f
https://doi.org/10.1063/1.1710160
https://doi.org/10.1063/1.1710160