Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Il-Hyun Choi"'
Autor:
Seung Hoon Yoo, Hui Geng, Tin Lok Chiu, Siu Ki Yu, Dae Chul Cho, Jin Heo, Min Sung Choi, Il Hyun Choi, Cong Cung Van, Nguen Viet Nhung, Byung Jun Min, Ho Lee
Publikováno v:
Frontiers in Medicine, Vol 7 (2020)
The global pandemic of coronavirus disease 2019 (COVID-19) has resulted in an increased demand for testing, diagnosis, and treatment. Reverse transcription polymerase chain reaction (RT-PCR) is the definitive test for the diagnosis of COVID-19; howev
Externí odkaz:
https://doaj.org/article/818821a5d8664c99abbddea51d79af6c
Publikováno v:
2010 International SoC Design Conference.
A switched-capacitor delta-sigma analog-to-digital converter (ADC) including preamplifier and bandgap reference for digital electret microphone is presented. It uses quantization noise coupling to achieve third-order noise shaping with only two integ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee150cf344d8b678603258b74e46400c
https://doi.org/10.1109/socdc.2010.5682915
https://doi.org/10.1109/socdc.2010.5682915
Publikováno v:
1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395).
Using a pulsed-power inductively coupled plasma technique, etching characteristics for a SiO/sub 2/ film were investigated and applied to control the ferroelectric performance degradation induced by plasma etching when a ferroelectric capacitor struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc5f88670432cd138d8edc05804edce
https://doi.org/10.1109/ppid.1999.798835
https://doi.org/10.1109/ppid.1999.798835
Autor:
Sung-Fun Hong, Jong-Kook Kim, Il-Hyun Choi, Jin-Soo Kim, Min-Ho Jung, Ki-Ho Baik, Jae-Chang Jung, Geunsu Lee, Hyeong-Soo Kim
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.
In the lithographic processing, application of a bottom anti-reflective coating (BARC) has proven to provide a number of benefits, such as elimination of reflective notching generated by reflections from highly reflective substrates, reduced swing ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8361147daca6e325ea38157458ed053f
https://doi.org/10.1109/imnc.1999.797485
https://doi.org/10.1109/imnc.1999.797485
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.
Aluminum (Al) has been widely used as an interconnecting material for integrated circuits. As the manufacturing of integrated circuits moves toward sub-quarter-micron design rules, there is a strong need for Al etching process with thin Photo Resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbb59296b9cc22ad79f745220e7c1dc7
https://doi.org/10.1109/imnc.1999.797555
https://doi.org/10.1109/imnc.1999.797555
Publikováno v:
Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334).
This paper presents a new low-power on-chip voltage reference less sensitive to the process variation in an 0.5 /spl mu/m DRAM process where neither reliable BJT nor depletion MOS are available. The proposed voltage reference uses the MOS threshold v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97f609bcff32f66b0ed782b426e02fbc
https://doi.org/10.1109/asic.1997.617029
https://doi.org/10.1109/asic.1997.617029
Autor:
Ki-Ho Baik, Ikboum Hur, Sang-Sool Koo, Keuntaek Park, Il-Hyun Choi, Chul Shin, Lee-Ju Kim, Youngmo Koo
Publikováno v:
SPIE Proceedings.
ArF DUV ((lambda) equals 193 nm) lithography is rapidly emerging after 248 nm lithography because of the demand for further resolution improvement and wider Depth Of Focus (DOF). However, the 193 nm lithography requires innovative development in vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d63157f226f7e82ccde2f87f94056d8
https://doi.org/10.1117/12.373290
https://doi.org/10.1117/12.373290
Publikováno v:
SPIE Proceedings.
Photomask is one of the most critical technologies for lithography. Optical lithography at resolution limit is a non- linear pattern transfer process. OPC (Optical Proximity Correction) technology has been used in the semiconductor industry for contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04810734cc72e995c0d25c42c3697ee4
https://doi.org/10.1117/12.373369
https://doi.org/10.1117/12.373369
Publikováno v:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V.
A chemically assisted physical etching has been developed for the patterning of the Pt electrode with Cl 2 /Ar Plasma. Cl 2 plasma performs a very special role which leads to a fence free Pt etching with the highly steep profile. It was found that Pt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca81f749cc7e7bb80de4a14710deb0b6
https://doi.org/10.1117/12.361306
https://doi.org/10.1117/12.361306
Autor:
Jae Chang Jung, Hyeong-Soo Kim, Il-Hyun Choi, Cha-Won Koh, Ki-Ho Baik, Geunsu Lee, Min-Ho Jung
Publikováno v:
SPIE Proceedings.
We have newly developed a novel multi-functional monomer. Application of this monomer also allows us to introduce another unit to further improve its etch resistance. Furthermore, our novel resist containing this multi- functional monomer exhibits an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e341493cf8836ea60c75a2274d1974
https://doi.org/10.1117/12.350206
https://doi.org/10.1117/12.350206