Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Il-Hwan Cho"'
Publikováno v:
IEEE Access, Vol 11, Pp 113704-113711 (2023)
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a metho
Externí odkaz:
https://doaj.org/article/da25561f7850480ea2c4045e65a0b84d
Publikováno v:
Results in Physics, Vol 11, Iss , Pp 475-481 (2018)
In this letter, a novel metal oxide semiconductor field effect transistor (MOSFET) is designed to improve high temperature operation characteristic. The MOSFET used in this study can reduce the leakage current by reducing carrier injection at high te
Externí odkaz:
https://doaj.org/article/b4c1e5f1bbe546c580e0e9d8d2b2f688
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 23:64-70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9871c1a975d891302e503bdd1a84be01
https://doi.org/10.5573/jsts.2023.23.1.64
https://doi.org/10.5573/jsts.2023.23.1.64
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 22:376-385
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49b985150f5b118e47e58d61eedc84ee
https://doi.org/10.5573/jsts.2022.22.5.376
https://doi.org/10.5573/jsts.2022.22.5.376
Publikováno v:
IEEE Access. 10:108067-108074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f7552152e2a3b7068584c2caabb852
https://doi.org/10.1109/access.2022.3212540
https://doi.org/10.1109/access.2022.3212540
Autor:
Young Mo Kang, Jong Whan Kang, N.R. Kim, Byeong-Cheol Ahn, Chae Moon Hong, J.S. Eun, Il Hwan Cho, Sang Jin Lee
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports
Scientific Reports
We aimed to compare the reliability of bone scintigraphy (BS) and fluorine-18-fluorodeoxyglucose (18F-FDG) positron emission tomography (PET)—derived parameters in the detection of active arthritis in 28-joint areas and evaluate the reliability of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0361f2d4380101dc999efdc8b910be50
https://doaj.org/article/2724d2482aa340c3bdb3714f680c718f
https://doaj.org/article/2724d2482aa340c3bdb3714f680c718f
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:145-150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc858361ef62c2bb60096ba5687273be
https://doi.org/10.5573/jsts.2020.20.2.145
https://doi.org/10.5573/jsts.2020.20.2.145
Publikováno v:
Protected horticulture and Plant Factory. 29:28-35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2f5a713ab7d7b14caa2a0f1154bc848
https://doi.org/10.12791/ksbec.2020.29.1.28
https://doi.org/10.12791/ksbec.2020.29.1.28
Publikováno v:
Japanese Journal of Applied Physics. 62:024001
In this paper, variation in the parameters of the select transistor of a vertical-NAND (V-NAND) flash memory device is investigated for device optimization and performance evaluation. Device characteristics including threshold voltage (V TH), subthre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156cccd5238f2d21fc99e643c54f62c5
https://doi.org/10.35848/1347-4065/acb57e
https://doi.org/10.35848/1347-4065/acb57e
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1021
In vertical-NAND (V-NAND) flash memory, the effect of current path change according to the program state was analyzed. A new memory structure in which a heavily doped polysilicon layer is added around a typical V-NAND channel was proposed, and electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ec01ff4ce284a3c0eabc1a8d5b0d22
https://doi.org/10.35848/1347-4065/acaa41
https://doi.org/10.35848/1347-4065/acaa41