Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Il Mok Park"'
Autor:
Min-Chul Han, Chang-Hun Ko, Cheol-Hwan Kim, Masayuki Terai, Hye-Sun Kim, Oh-Hun Kwon, Ji-Hyun Cheon, Jin-Woo Choi, Jung-Hoon Park, Kyu-Sul Park, Jae-Ho Pak, Do-Youn Park, Seung-Yeol Oh, Min-Su Kim, Hyun-Woo Ryoo, Myung-Chul Shin, Bo-Tak Lim, Il-Mok Park, Hyuck-Joon Kwon, Yoon-Jong Song, Jung-Yun Choi, Gwan-Hyeob Koh, Hyung-Jong Ko, Yu-Gyun Shin
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f86e15a85998d7c0f87f5ec1a4a28928
https://doi.org/10.1117/12.2656206
https://doi.org/10.1117/12.2656206
Publikováno v:
Journal of Applied Physics; 1/15/2006, Vol. 99 Issue 2, p024509, 6p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 7 Graphs
Publikováno v:
Metals and Materials International. 15:661-664
The formations of top and side hillocks in aluminum (Al) lines on glass substrate were studied through scanning electron microscopy (SEM) images. The density of top hillock in Al lines with Mo capping layer was smaller than that of Al film without ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3203385e0943b36c11de050f3a1b3cb4
https://doi.org/10.1007/s12540-009-0661-z
https://doi.org/10.1007/s12540-009-0661-z
Autor:
Byoung-Gon Yu, Seung Min Han, Young-Bae Park, Kyu-Jeong Choi, Sang-Ouk Ryu, Young-Chang Joo, Il-Mok Park, Jung-Kyu Jung
Publikováno v:
Thin Solid Films. 517:848-852
The biaxial modulus and the coefficient of thermal expansion (CTE) of Ge 2 Sb 2 Te 5 (GST) films with the thickness of 300 nm were characterized using the substrate curvature method on two different substrates. The elastic modulus of the GST films wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92b586dce7dac88f4b050551697c147
https://doi.org/10.1016/j.tsf.2008.08.194
https://doi.org/10.1016/j.tsf.2008.08.194
Publikováno v:
Japanese Journal of Applied Physics. 47:1491-1495
Ge2Sb2Te5 (GST) films with a thickness of 300 nm, in which the nitrogen (N) implant dose was 0, 1013, or 1015 ions/cm2, were prepared by RF magnetron sputtering on Si and glass substrates. The thermomechanical properties of the GST films, viz., the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::416246459d0bd9f7610a1d81e7b3b0de
https://doi.org/10.1143/jjap.47.1491
https://doi.org/10.1143/jjap.47.1491
Publikováno v:
Thin Solid Films. 504:284-287
The dependence of annealing temperature on stress and microstructure in damascene Cu was examined by X-ray diffraction and transmission electron microscopy. The measured hydrostatic stress was found to increase with increasing annealing temperature i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95444ee65c72cd0f3c27d8d2f7fe2f9
https://doi.org/10.1016/j.tsf.2005.09.013
https://doi.org/10.1016/j.tsf.2005.09.013
Autor:
Young-Soo Lim, Kyu Sul Park, Song Yi Kim, Jong Whan Ma, Gitae Jeong, Ho Kyun Ahn, Jae-hee Oh, Seok-Woo Nam, Sung Ho Eun, Il Mok Park, Dong-ho Ahn, Dae-Hwan Kang, Sug Woo Jung, Gyo Young Jin, Eun Seung Jung, Zhe Wu, Jeong Hee Park, Sang Su Park, Sungrae Cho, Jae-Hyun Park
Publikováno v:
2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
Needs for the performance improvement of memory subsystem in big data and clouding computing era begin to open new markets for emerging memories such as phase change memory, spin-torque-transfer magnetic memory, and metal oxide memory. To fulfill the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28df914dc2c1c3fd0fe615074968865c
https://doi.org/10.1109/nvmts.2014.7060836
https://doi.org/10.1109/nvmts.2014.7060836
Publikováno v:
Japanese Journal of Applied Physics. 50:061201
Phase change random access memory (PRAM) technology is based on electrically triggered, reversible amorphousto-crystalline phase transformations in phase change materials. Ge2Sb2Te5 (GST) is the most widely studied phase change material, but its appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ff1fe9757aad0692e83e52693092934
https://doi.org/10.1143/jjap.50.061201
https://doi.org/10.1143/jjap.50.061201
Publikováno v:
Applied Physics Letters. 95:032104
Atomic migration under an electric field, electromigration, in molten and crystalline Ge2Sb2Te5 was studied using a pulsed dc stress to an isolated line structure. Under a single pulse (∼10−3 s), Ge2Sb2Te5 was melted by Joule heating, and an elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d551e683b9fd3102913847dd49765386
https://doi.org/10.1063/1.3184584
https://doi.org/10.1063/1.3184584
Publikováno v:
Applied Physics Letters. 94:061904
It has been demonstrated that the crystallization behaviors of undoped and N-doped Ge2Sb2Te5 (GST) films can be evaluated by studying the thermomechanical behavior of the films. The crystallization temperatures (Tc) for undoped and 15 at. % N-doped G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b374ace1732c6797fedc8f572510d62
https://doi.org/10.1063/1.3078820
https://doi.org/10.1063/1.3078820