Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Il Ho Jeong"'
Publikováno v:
Metals, Vol 10, Iss 4, p 467 (2020)
Through-silicon via (TSV) is an important component for implementing 3-D packages and 3-D integrated circuits as the TSV technology allows stacked silicon chips to interconnect through direct contact to help facilitate high-speed signal processing. B
Externí odkaz:
https://doaj.org/article/51be62a7be8e432eb0f56451b596a3d6
Publikováno v:
Journal of Materials Engineering and Performance. 30:4712-4720
The through-silicon via (TSV) 3D integration method has become one of the most widely used techniques for achieving system-level integration for applications that require smaller package sizes, higher interconnection density and high performance. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea377773cd013f882dbedd597db12b79
https://doi.org/10.1007/s11665-021-05775-4
https://doi.org/10.1007/s11665-021-05775-4
Publikováno v:
Metals, Vol 10, Iss 467, p 467 (2020)
Metals
Volume 10
Issue 4
Metals
Volume 10
Issue 4
Through-silicon via (TSV) is an important component for implementing 3-D packages and 3-D integrated circuits as the TSV technology allows stacked silicon chips to interconnect through direct contact to help facilitate high-speed signal processing. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47482535bda5a8c8511035614ce38bf3
https://doi.org/10.3390/met10040467
https://doi.org/10.3390/met10040467
Publikováno v:
Journal of the Microelectronics and Packaging Society. 21:23-29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22654b02e39cce119de65e6b5931ca51
https://doi.org/10.6117/kmeps.2014.21.2.023
https://doi.org/10.6117/kmeps.2014.21.2.023
Publikováno v:
Electronic Materials Letters. 10:649-653
The electrical characteristics and failure of a Through-Silicon Via (TSV) were investigated using a thermal shock test. The electrical characteristics, such as resistance (R), self-inductance (L s ), self-capacitance (C s ), and mutual capacitance (C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f1f404888da4567bf256fed4aee646
https://doi.org/10.1007/s13391-013-3260-6
https://doi.org/10.1007/s13391-013-3260-6
Publikováno v:
Electronic Materials Letters. 9:389-392
The electrical characteristics and thermal shock properties of a Through Silicon Via (TSV) for the three dimensional (3D) stacking of a Si wafer were investigated. The TSVs were fabricated on a Si wafer by a laser drilling process. The via had a diam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf81b9cc3c2d9467c79316045134e32
https://doi.org/10.1007/s13391-013-0006-4
https://doi.org/10.1007/s13391-013-0006-4