Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Il Ho AHN"'
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2866 (2023)
We propose and demonstrate that temperature-dependent curve-fitting error values of the Schottky diode I–V curve in the forward regime can be an auxiliary diagnostic signal as the temperature-scan Capacitance DLTS (CDLTS) signals and helps to work
Externí odkaz:
https://doaj.org/article/63e5fa20db0f47a298ac27cf51a81d5a
Autor:
Dong Jin Lee, Sung Ryong Ryu, Ganesan Mohan Kumar, Il-Ho Ahn, Jihoon Kyhm, Deuk Young Kim, Pugazhendi Ilanchezhiyan
Publikováno v:
Journal of Materials Research and Technology, Vol 13, Iss , Pp 397-407 (2021)
Here in, we report the fabrication of thin two dimensional (2D) ZnO nanosheets (NSs) flexible piezo-phototronic ultraviolet (UV) photodetector (PD). The morphological and optical properties of the as-synthesized ZnO NSs is characterized in detail. Th
Externí odkaz:
https://doaj.org/article/5eca3d12cbc94c7bbc8d4a30bf1f2a70
Publikováno v:
Nanomaterials, Vol 12, Iss 16, p 2773 (2022)
Mobility spectrum analysis (MSA) is a method that enables the carrier density (and mobility) separation of the majority and minority carriers in multicarrier semiconductors, respectively. In this paper, we use the p-GaAs layer in order to demonstrate
Externí odkaz:
https://doaj.org/article/e597d1039ecc412c8c87bafc30315591
Publikováno v:
Results in Physics, Vol 21, Iss , Pp 103854- (2021)
A simple method for obtaining the charge carrier density of two-dimensional (2D) materials is proposed herein. A formula is suggested for the extraction of the 2D charge carrier density using the horizontal depletion width, which is visually represen
Externí odkaz:
https://doaj.org/article/a84edc46b25143e0916c879b1ab333dd
Autor:
Seong Su HONG, Jae Yeon LEE, Yeon Woo JEONG, Ji Eun LEE, Yun-Hyeok CHOI, Wonsik JEONG, Eun-Kyung AHN, Chun Whan CHOI, Il Ho AHN, Joa Sub OH
Publikováno v:
Turkish Journal of Chemistry; 2023, Vol. 47 Issue 6, p1346-1354, 20p
Publikováno v:
Nanomaterials, Vol 11, Iss 3, p 585 (2021)
The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In0.52Al0.48As/In0.53Ga0.47As quantum well structure that comprises two quantum-confined electron-states and two hole-s
Externí odkaz:
https://doaj.org/article/caadc76f4b8d48948ceb3dfd1484a4b7
Publikováno v:
Optics letters. 47(4)
We report the performance of a MoS
Autor:
Dae Hwan Ahn, Do Kyung Hwang, Ji Hoon Kang, Seongil Im, Jong Bae Park, Jin Dong Song, Jongtae Ahn, Hyun Tae Choi, Yeonjin Yi, Il Ho Ahn, Daeyeon Kim, Minju Kim, Min-Chul Park, Soohyung Park, Jihoon Kyhm
Publikováno v:
ACS Applied Materials & Interfaces. 12:10858-10866
Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applicatio...
Autor:
Jihoon Kyhm, Deuk Young Kim, Juwon Lee, Woochul Yang, Sangeun Cho, Yongcheol Jo, Soo Ho Choi, Il-Ho Ahn
Publikováno v:
Current Applied Physics. 19:498-502
We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilitie
Publikováno v:
Results in Physics, Vol 21, Iss, Pp 103854-(2021)
A simple method for obtaining the charge carrier density of two-dimensional (2D) materials is proposed herein. A formula is suggested for the extraction of the 2D charge carrier density using the horizontal depletion width, which is visually represen