Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ikuto Tsuyuzaki"'
Autor:
Taisuke Kageura, Masakuni Hideko, Ikuto Tsuyuzaki, Aoi Morishita, Akihiro Kawano, Yosuke Sasama, Takahide Yamaguchi, Yoshihiko Takano, Minoru Tachiki, Shuuichi Ooi, Kazuto Hirata, Shunichi Arisawa, Hiroshi Kawarada
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Abstract Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crysta
Externí odkaz:
https://doaj.org/article/84793a3f5f8e4bd3bf7e68ce85b1f11c
Autor:
Shunichi Arisawa, Shotaro Amano, Minoru Tachiki, Taisuke Kageura, Miwako Takano, Yasuhiro Takahashi, Aoi Morishita, Yoshihiko Takano, Shuuichi Ooi, Ikuto Tsuyuzaki, Hiroshi Kawarada
Publikováno v:
Carbon. 181:379-388
Superconducting quantum interference devices (SQUIDs) are magnetometers with ultra-high sensitivity that have garnered attention owing to their potential application in flux qubits for quantum computing. The Josephson junction is an important compone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::410cc9e3456e7d705a94a73b41d4ba1a
https://doi.org/10.1016/j.carbon.2021.04.097
https://doi.org/10.1016/j.carbon.2021.04.097
Autor:
Aoi Morishita, Taisuke Kageura, Ikuto Tsuyuzaki, Yoshihiko Takano, Masakuni Hideko, Takahide Yamaguchi, Hiroshi Kawarada, Shotaro Amano
Publikováno v:
Diamond and Related Materials. 90:181-187
We demonstrate nano- and micro-size patterning processes for high quality single crystal superconducting boron-doped diamond films with low damage using selective microwave plasma chemical vapour deposition and selective oxygen plasma etching. The of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa91bda0b482937d017acdecfd2d816
https://doi.org/10.1016/j.diamond.2018.10.013
https://doi.org/10.1016/j.diamond.2018.10.013
Autor:
A. Morishita, S. Arisawa, T. Kageura, H. Kawarada, S. Amano, Masashi Tachiki, Ikuto Tsuyuzaki, S. Ooi, Y. Takano
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b15946da61e52bc4eda853dcb33e0d2f
https://doi.org/10.7567/ssdm.2019.ps-9-02
https://doi.org/10.7567/ssdm.2019.ps-9-02
Autor:
Taisuke Kageura, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada, Shinobu Onoda, Ikuto Tsuyuzaki, Nobutaka Oi, Satoshi Okubo
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90742cffec67e9afb55f586860b9ace4
https://doi.org/10.1038/s41598-018-28837-5
https://doi.org/10.1038/s41598-018-28837-5
Autor:
Taisuke Kageura, Atsushi Hiraiwa, Hiroshi Kawarada, Masafumi Inaba, Takuya Kudo, Ikuto Tsuyuzaki, Nobutaka Oi, Shinobu Onoda, Satoshi Okubo, Tsubasa Muta
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b80c7590304661df87d6311fa122789
https://doi.org/10.7567/ssdm.2017.n-6-04
https://doi.org/10.7567/ssdm.2017.n-6-04
Autor:
Hiroshi Kawarada, T. Yamaguchi, Kazuto Hirata, Yoshihiko Takano, Yosuke Sasama, Shunichi Arisawa, Ikuto Tsuyuzaki, Shuuichi Ooi, Masakuni Hideko, Masashi Tachiki, Taisuke Kageura
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37c9bcb8597f71630a73d8c7ff296220
https://doi.org/10.7567/ssdm.2017.ps-9-02
https://doi.org/10.7567/ssdm.2017.ps-9-02