Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Ikunao Isomura"'
Autor:
Takashi Hirano, Hideo Tsuchiya, Riki Ogawa, Nobutaka Kikuiri, Ikunao Isomura, Hiromu Inoue, Ryoji Yoshikawa
Publikováno v:
SPIE Proceedings.
Mask inspection tool with DUV laser source has been used for Photo-mask production in many years due to its high sensitivity, high throughput, and good CoO. Due to the advance of NGL technology such as EUVL and Nano-imprint lithography (NIL), there i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ce76c7ac8ab2bfe05e4809ef841de8
https://doi.org/10.1117/12.2197890
https://doi.org/10.1117/12.2197890
Publikováno v:
Japanese Journal of Applied Physics. 41:4233-4237
As the mask pattern becomes smaller and more complex, the demand for a highly precise mask inspection system with high detection sensitivity and few false defects increases. In regard to inspection systems using a deep-UV wavelength, some issues have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db76d1705fdaaf6abde761db96a8c266
https://doi.org/10.1143/jjap.41.4233
https://doi.org/10.1143/jjap.41.4233
Autor:
Kenichi Takahara, Ikunao Isomura, Manabu Isobe, Hideaki Hashimoto, Riki Ogawa, Hideo Tsuchiya, Nobutaka Kikuiri, Eiji Matsumoto
Publikováno v:
SPIE Proceedings.
Various technologies such as multiple patterning (MP) are being developed to extend the current DUV optical lithography to deal with the delay of next generation lithography such as EUV and NIL. Likewise, it is necessary to continue to develop techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e76438c9a1a4105dba36bb48d1079d
https://doi.org/10.1117/12.2029363
https://doi.org/10.1117/12.2029363
Publikováno v:
SPIE Proceedings.
Photo lithography potential expands for 32nm node to 2xnm device production by the development of immersion technology and the introduction of phase shift mask, and NPI-6000 using 199nm laser source was developed to correspond to 2xnm node photo mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3c58a085fbffbb7741319d7c3d5c5c4
https://doi.org/10.1117/12.973655
https://doi.org/10.1117/12.973655
Autor:
Ikunao Isomura, Eiji Matsumoto, Masatoshi Hirono, Kyoji Yamashita, Yoshitake Tsuji, Yukio Tamura, Nobuyuki Harabe
Publikováno v:
SPIE Proceedings.
This paper describes a novel technology Variable Sensitivity Detection (VSD) for de-sensing SRAF nuisance defects in a mask inspection system. The point of our approach is to search the nearest thin-line to each defect candidate and estimate the line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d139995e34557929c045b03dfa280af6
https://doi.org/10.1117/12.824323
https://doi.org/10.1117/12.824323
Autor:
Kinya Usuda, Nobutaka Kikuiri, Naohisa Takayama, Yoshitake Tsuji, Motonari Tateno, Kenichi Matsumura, Kenichi Takahara, Ryoichi Hirano, Shingo Murakami, Kyoji Yamashita, Ikunao Isomura, Yukio Tamura
Publikováno v:
SPIE Proceedings.
We have developed a mask inspection system using 199nm inspection light wavelength. This system performs transmission and reflection inspection processes concurrently within two hours per plate. By the evaluation result of mask images and inspection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10601e1261c07750296ae12e7356513c
https://doi.org/10.1117/12.692811
https://doi.org/10.1117/12.692811
Autor:
Hideo Tsuchiya, Ikunao Isomura, Masao Otaki, Shinichi Imai, Motonari Tateno, Katsumi Ohira, Yoshitake Tsuji, Kenichi Matsumura, Osamu Suga, Shingo Murakami, Kenichi Takahara, Yukio Tamura, Kinya Usuda, Nobutaka Kikuiri, Ryoichi Hirano
Publikováno v:
SPIE Proceedings.
The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f8a4691cb6bcdde8fb8cac7aee4e4ab
https://doi.org/10.1117/12.683579
https://doi.org/10.1117/12.683579
Autor:
Noboru Kobayashi, Ryoich Hirano, Nobuyuki Yoshioka, Takeshi Nishizaka, Katsumi Ohira, Makoto Taya, Toru Tojo, Akemi Miwa, Junji Oaki, Yasushi Sanada, Riki Ogawa, Dong-Hoon Chung, Shinji Sugihara, Hideo Tsuchiya, Akihiko Sekine, Hiromu Inoue, Masao Otaki, Ikunao Isomura, Kazuto Matsuki, Hitoshi Suzuki, Kazuhiro Nakashima, Shinichi Imai
Publikováno v:
SPIE Proceedings.
A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4368d58ab830403f81b3b54041094432
https://doi.org/10.1117/12.579133
https://doi.org/10.1117/12.579133
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).
For the 130 nm generation, the Phase Shift Mask (PSM) is expected to be widely used. Moreover, demand for higher transmission PSM is increasing and a mask inspection system with high detection sensitivity for these masks is also required. In this pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70feeddf20798769e4cd5f04c469aef0
https://doi.org/10.1109/imnc.2001.984070
https://doi.org/10.1109/imnc.2001.984070
Autor:
Masami Ikeda, Hiroyuki Ikeda, Kazuhiro Nakashima, Kyoji Yamashita, Hideo Tsuchiya, Takeshi Nishizaka, Ikunao Isomura, Toshiyuki Watanabe, Eiji Sawa
Publikováno v:
SPIE Proceedings.
Mask inspection has become a much more important factor in LSI manufacturing. In order to perform mask inspection with high reliability for devices of 100-130 nm rule and below, a high-resolution and high-speed die-to-database inspection system is in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::541c16c1bbd2710110589e1c6b37192e
https://doi.org/10.1117/12.476961
https://doi.org/10.1117/12.476961