Zobrazeno 1 - 10
of 999
pro vyhledávání: '"Ikonic, Z"'
Autor:
Reboud, V., Buca, D., Sigg, H., Hartmann, J. M., Ikonic, Z., Pauc, N., Calvo, V., Rodriguez, P., Chelnokov, A.
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical si
Externí odkaz:
http://arxiv.org/abs/2012.10220
Autor:
Reboud, V., Concepción, O., Du, W., El Kurdi, M., Hartmann, J.M., Ikonic, Z., Assali, S., Pauc, N., Calvo, V., Cardoux, C., Kroemer, E., Coudurier, N., Rodriguez, P., Yu, S.-Q., Buca, D., Chelnokov, A.
Publikováno v:
In Photonics and Nanostructures - Fundamentals and Applications February 2024 58
Autor:
Elbaz, A., Buca, D., Driesch, N. Von den, Pantzas, K., Patriarche, G., Zerounian, N., Herth, E., Checoury, X., Sauvage, S., Sagnes, I., Foti, A., Ossikovski, R., Hartmann, J. -M., Boeuf, F., Ikonic, Z., Boucaud, P., Grutzmacher, D., Kurdi, M. El
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed f
Externí odkaz:
http://arxiv.org/abs/2001.04927
Autor:
Lever, L., Ikonić, Z., Valavanis, A., Kelsall, R. W., Myronov, M., Leadley, D. R., Hu, Y., Owens, N., Gardes, F. Y., Reed, G. T.
Publikováno v:
Journal of Applied Physics 112(12):123105-123105-7 (2012)
We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch w
Externí odkaz:
http://arxiv.org/abs/1302.7241
Publikováno v:
Phys. Rev. B 85, 235427 (2012)
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device designs.
Externí odkaz:
http://arxiv.org/abs/1206.0280
Publikováno v:
Phys. Rev. B 83, 195321 (2011)
Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a variety of n-type SiGe-based heterostructures as design candidates, howeve
Externí odkaz:
http://arxiv.org/abs/1104.1727
Publikováno v:
Phys. Rev. B 77, 075312 (2008)
Scattering rate calculations in two-dimensional Si/SiGe systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces, however, may exhibit diffuse Ge profiles either by design or as a limitation of t
Externí odkaz:
http://arxiv.org/abs/0908.0552
Publikováno v:
Phys. Rev. B 78, 035420 (2008)
Although most work toward the realization of group IV quantum cascade lasers (QCLs) has focused on valence-band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-ty
Externí odkaz:
http://arxiv.org/abs/0908.0557
Publikováno v:
Phys. Rev. B vol. 75, no. 29, p. 205332, 2007
Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-valley effective mass approximation and the empirical pseudopotential met
Externí odkaz:
http://arxiv.org/abs/0907.4368
Autor:
Schulte-Braucks, C., Glass, S., Hofmann, E., Stange, D., von den Driesch, N., Hartmann, J.M., Ikonic, Z., Zhao, Q.T., Buca, D., Mantl, S.
Publikováno v:
In Solid State Electronics February 2017 128:54-59