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pro vyhledávání: '"Ikeda, Shoji"'
Akademický článek
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Autor:
Takemura, Yasuyuki, Aoki, Masataka, Danshita, Tsuyoshi, Iguchi, Akinori, Ikeda, Shoji, Miyaoka, Yuma, Sumino, Haruhiko, Syutsubo, Kazuaki
Publikováno v:
In Journal of Hazardous Materials 15 October 2022 440
Autor:
Sinha, Jaivardhan, Hayashi, Masamitsu, Kellock, Andrew J., Fukami, Shunsuke, Yamanouchi, Michihiko, Sato, Hideo, Ikeda, Shoji, Mitani, Seiji, Yang, See-hun, Parkin, Stuart S. P., Ohno, Hideo
We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that th
Externí odkaz:
http://arxiv.org/abs/1305.6660
Akademický článek
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Autor:
Hayakawa, Jun, Ikeda, Shoji, Miura, Katsuya, Yamanouchi, Michihiko, Lee, Young Min, Sasaki, Ryutaro, Ichimura, Masahiko, Ito, Kenchi, Kawahara, Takayuki, Takemura, Riichiro, Meguro, Toshiyasu, Matsukura, Fumihiro, Takahashi, Hiromasa, Matsuoka, Hideyuki, Ohno, Hideo
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random access memory
Externí odkaz:
http://arxiv.org/abs/0801.1355
We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically predicted value.
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610526
Autor:
Hayakawa, Jun, Ikeda, Shoji, Lee, Young Min, Sasaki, Ryutaro, Meguro, Toshiyasu, Matsukura, Fumihiro, Takahashi, Hiromasa, Ohno, Hideo
Publikováno v:
Jpn. J. Appl. Phys., Vol.45 (2006) No.40 pp.L1057-L1060
We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO base
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609306
We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608551
We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnet pinned layers w
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606503
Autor:
Hayakawa, Jun, Ikeda, Shoji, Lee, Young Min, Sasaki, Ryutaro, Meguro, Toshiyasu, Matsukura, Fumihiro, Takahashi, Hiromasa, Ohno, Hideo
Publikováno v:
Japanese Journal of Applied Physics, Vol. 44, No.41, 2005, pp.L1267-L1270.
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510538