Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Iii. R.E. Leoni"'
Autor:
J.J. Komiak, Y. Wang, Joseph A. Smart, E.M. Chumbes, Noel C. MacDonald, Iii. R.E. Leoni, D. Hogue, A. T. Schremer, James R. Shealy, S.J. Lichwalla
Publikováno v:
IEEE Transactions on Electron Devices. 48:420-426
AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrates have for the first time been realized using organometallic vapor phase epitaxy (OMVPE). Using 1 /spl Omega/-cm p-Si(111), these devices exhibited static output characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5674dacbbff160f9d45de907d3d597
https://doi.org/10.1109/16.906430
https://doi.org/10.1109/16.906430
Autor:
Thomas E. Kazior, P.F. Marsh, C.S. Whelan, Iii. R.E. Leoni, S.J. Lichwala, W. E. Hoke, P. J. Lemonias, S.M. Lardizabal, P. Lyman, R.A. McTaggart
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1307-1311
This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0992f9e74ff0157ca54b0b447bb9b583
https://doi.org/10.1109/4.868040
https://doi.org/10.1109/4.868040
Publikováno v:
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
In this paper, we present the first implementation of a K-band subharmonic down-converter fabricated in a 0.18-/spl mu/m GaAs Metamorphic High Electron Mobility Transistor (MHEMT) process. The low noise and high gain characteristics of the MHEMTs at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::128f2cefd3367461c878166dd2d22cae
https://doi.org/10.1109/mwsym.2001.967141
https://doi.org/10.1109/mwsym.2001.967141