Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Igor V. Shtrom"'
Autor:
Rodion R. Reznik, Konstantin P. Kotlyar, Igor V. Shtrom, Yuriy B. Samsonenko, Artem I. Khrebtov, George E. Cirlin
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 21, Iss 6, Pp 866-871 (2021)
Recently, III-V semiconductor nanostructures of reduced dimension attract more and more interest of researchers for the new generation devices creation. Combinations of nanostructures with different dimensions are of special interest, among them, for
Externí odkaz:
https://doaj.org/article/ba12c8cd8f094530ac78b6c0c87db51f
Publikováno v:
Nanomaterials, Vol 13, Iss 11, p 1737 (2023)
We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry
Externí odkaz:
https://doaj.org/article/8098fe6a9f0b401db524781e8f225ad3
Autor:
Svetlana A. Kadinskaya, Valeriy M. Kondratev, Ivan K. Kindyushov, Olga Yu. Koval, Dmitry I. Yakubovsky, Alexey Kusnetsov, Alexey I. Lihachev, Alexey V. Nashchekin, Irina Kh. Akopyan, Alexey Yu. Serov, Mariana E. Labzovskaya, Sergey V. Mikushev, Boris V. Novikov, Igor V. Shtrom, Alexey D. Bolshakov
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 58 (2022)
Zinc oxide (ZnO) nanostructures are widely used in various fields of science and technology due to their properties and ease of fabrication. To achieve the desired characteristics for subsequent device application, it is necessary to develop growth m
Externí odkaz:
https://doaj.org/article/93a8515a79f143bcb4a386cc23d4de4e
Autor:
Alexey D. Bolshakov, Alexey M. Mozharov, Georgiy A. Sapunov, Igor V. Shtrom, Nickolay V. Sibirev, Vladimir V. Fedorov, Evgeniy V. Ubyivovk, Maria Tchernycheva, George E. Cirlin, Ivan S. Mukhin
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 146-154 (2018)
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our st
Externí odkaz:
https://doaj.org/article/3e982dbd8ac74bbe95a99adaad31d2a5
Autor:
Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov, Sergey V. Fedina, Fedor M. Kochetkov, Vladimir Neplokh, Georgiy A. Sapunov, Liliia N. Dvoretckaia, Demid A. Kirilenko, Igor V. Shtrom, Regina M. Islamova, George E. Cirlin, Maria Tchernycheva, Alexey Yu. Serov, Ivan S. Mukhin
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2110 (2020)
Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured
Externí odkaz:
https://doaj.org/article/edfd9b65731041f383fb54b6a018740e
Autor:
Omer Arif, Valentina Zannier, Vladimir G. Dubrovskii, Igor V. Shtrom, Francesca Rossi, Fabio Beltram, Lucia Sorba
Publikováno v:
Nanomaterials, Vol 10, Iss 3, p 494 (2020)
The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the pres
Externí odkaz:
https://doaj.org/article/127f87feb3ad480f92edbfbf487dfb20