Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Igor Prozheev"'
Autor:
Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095119-095119-8 (2021)
The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have
Externí odkaz:
https://doaj.org/article/8a4633fbfbce4d6396f32cc8b4bbeca5
Autor:
Marta Sawicka, Oliwia Gołyga, Natalia Fiuczek, Grzegorz Muzioł, Anna Feduniewicz-Żmuda, Marcin Siekacz, Henryk Turski, Robert Czernecki, Ewa Grzanka, Igor Prozheev, Filip Tuomisto, Czesław Skierbiszewski
Publikováno v:
Materials Science in Semiconductor Processing. 155:107234
Autor:
Igor Prozheev, Malgorzata Iwinska, Tomasz Sochacki, Michal Bockowski, René Bès, Filip Tuomisto
Publikováno v:
physica status solidi (b). :2200568
Autor:
Igor Prozheev, Filip Tuomisto, Michael Iza, James S. Speck, Burhan K. Saifaddin, Michael Wang, Abdulrahman M. Albadri, Yifan Yao, Christian J. Zollner, Steven P. DenBaars, Jianfeng Wang, Humberto M. Foronda, Abdullah Almogbel, Shuji Nakamura
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095119-095119-8 (2021)
Funding Information: This work was funded by the KACST-KAUST-UCSB Technology transfer program and the Solid State Lighting and Energy Electronics Center (SSLEEC) at UC Santa Barbara; a part of this work was carried out in the California NanoSystems I