Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Igor Polishchuk"'
Publikováno v:
Theriologia Ukrainica, Vol 21, Pp 24-36 (2021)
The article presents the results of regional surveys of bats in 2010–2020 in places planned for the construction of wind farms. With the use of modern ultrasonic detectors, computer programs and an electronic library of voices, 15 species were foun
Externí odkaz:
https://doaj.org/article/a466379ab370486b96ee4aca3cd30d92
Autor:
Igor Polishchuk, Naas E. F. Falz-Fein Askania-Nova Biosphere Reserve, Anatoliy Volokh, Valeriy Siokhin, P. I. Gorlov
Publikováno v:
Theriologia Ukrainica. 2021:24-36
The article presents the results of regional surveys of bats in 2010–2020 in places planned for the construction of wind farms. With the use of modern ultrasonic detectors, computer programs and an electronic library of voices, 15 species were foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3cc481f2378060dbe426a4596c2d8b0
https://doi.org/10.15407/tu2104
https://doi.org/10.15407/tu2104
Autor:
Askania Nova, Igor Polishchuk
Publikováno v:
Праці Теріологічної школи, Vol 11, Pp 71-76 (2012)
The question of inhabitation of the hillock mice (Mus spicilegus Petenyi, 1882) in the reserve “Ascania Nova” and prevailing part of the Left Bank of the Lower Dnipro was remained debatable during the last century. The name of this species was oc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::334cf65bb644643103edd184644d6f9b
https://doi.org/10.15407/ptt2012.11.071
https://doi.org/10.15407/ptt2012.11.071
Autor:
Scott E. Thompson, Igor Polishchuk, Sagy Levy, Krishnaswamy Ramkumar, Nirav Shah, Ravindra Kapre, Oliver Pohland
Publikováno v:
2006 64th Device Research Conference.
This paper presents a simple and cost-effective method to enhance 65nm SRAM technology performance using a single stress liner, resulting in 25% increase in cell read current. A novel slot contact process allows significant improvement of NMOS drive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eca002547ec779838565c35b824ee429
https://doi.org/10.1109/drc.2006.305174
https://doi.org/10.1109/drc.2006.305174
Publikováno v:
Review of Scientific Instruments. 71:3962
A frequency dependence of the capacitance of metal–oxide–semiconductor devices is often observed in wafer-level probe station measurements for frequencies exceeding 100 kHz. It is well established, however, that the true capacitance value in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082c93fa80dc9e2741a45676820ce7bc
https://doi.org/10.1063/1.1290495
https://doi.org/10.1063/1.1290495