Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Igor P. Marko"'
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XIX.
Publikováno v:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII.
Autor:
Justin Norman, John E. Bowers, Christopher R. Fitch, Igor P. Marko, Stephen J. Sweeney, Daehwan Jung, Aidas Baltusis
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
On-chip lasers are a key component for the realization of silicon photonics. The performance of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native substrates. To drive forward design optimization we investigated the temper
Autor:
Timothy D. Eales, Igor P. Marko, Alf R. Adams, Kristijonas Vizbaras, Stephen J. Sweeney, Alexander Andrejew
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-11
Auger recombination is known to be a significant non-radiative process limiting near- and mid-infrared quantum well lasers. The one-dimensional confinement of quantum wells and small band offsets (relative to the bandgap) permits two fundamentally di
Autor:
Dominic A. Duffy, Igor P. Marko, Christian Fuchs, Thilo Hepp, Jannik Lehr, Kerstin Volz, Wolfgang Stolz, Stephen J. Sweeney
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Autor:
Stephen J. Sweeney, Eric Tournié, Laurent Cerutti, Marta Rio Calvo, Aneirin R. Ellis, Igor P. Marko, Laura Monge Bartolome, Timothy D. Eales, Jean-Baptiste Rodriguez
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Autor:
C. Fuchs, Igor P. Marko, Stephen J. Sweeney, Jannik Lehr, Dominic A. Duffy, Wolfgang Stolz, Timothy D. Eales
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Autor:
Alexander Andrejew, Alf R. Adams, Stephen J. Sweeney, Kristijonas Vizbaras, Igor P. Marko, Timothy D. Eales
Publikováno v:
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Auger recombination is known to be a significant non-radiative channel in near- and mid-infrared quantum well emitters [1] . As a result, the threshold current density of semiconductor lasers increases substantially with increasing wavelength and tem
Autor:
Stephen J. Sweeney, Christopher R. Fitch, Jean-Baptiste Rodriguez, Dominic A. Duffy, Eric Tournié, Laurent Cerutti, Graham William Read, Igor P. Marko
Publikováno v:
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Epitaxially grown III-V semiconductor lasers on silicon substrates are key to the development of low-cost silicon photonic circuits. Antimony based Composite Quantum Well (CQW) devices on silicon, which overcome lattice constant and thermal mismatch