Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Igor M. Dobush"'
Autor:
Andrei S. Salnikov, Igor M. Dobush, Artem A. Popov, Dmitry V. Bilevich, Aleksandr E. Goryainov, Alexey A. Kalentyev, Aleksandr A. Metel
Publikováno v:
International Journal of Microwave and Wireless Technologies. 15:465-476
We propose the techniques for automatic processing of measurement results in the context of golden (typical) device selection and noise figure measurement. These techniques are for golden (typical) device selection and noise figure measurement proces
Publikováno v:
2022 International Siberian Conference on Control and Communications (SIBCON).
Autor:
A. S. Salnikov, I. S. Vasil’evskii, Dmitry D. Zykov, N. I. Kargin, Igor M. Dobush, Dmitry S. Bragin, Artem A. Popov, Andrey A. Gorelov
Publikováno v:
Electronics, Vol 10, Iss 2775, p 2775 (2021)
Electronics
Volume 10
Issue 22
Electronics
Volume 10
Issue 22
This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors
Publikováno v:
Instruments and Experimental Techniques. 62:175-184
Circuit schematics and a technique for designing controlled microwave digital step attenuators (DSAs) are described. The measurement results for the developed 0.1–4.5 GHz ET1000 microwave monolithic integrated circuit (MMIC) DSA with a parallel and
Publikováno v:
Russian Physics Journal. 61:2113-2120
The article describes circuit schematics, features and design methodology of microwave integrated digital step attenuators (DSAs) based on SiGe technology (SiGe BiCMOS). The measured characteristics of the designed 0.1–4.5 GHz microwave monolithic
Autor:
A. A. Popov, Aleksandr E. Goryainov, A. S. Salnikov, A. A. Kalentyev, D. V. Bilevich, Igor M. Dobush
Publikováno v:
AEU - International Journal of Electronics and Communications. 100:138-143
In this paper, a new nonlinear transistor modeling technique for gallium arsenide high-electron mobility transistor (GaAs HEMT) is proposed. The technique includes an analytical extraction, enhanced by applying nonlinear least squares regression and
Effect of Different De-Embedding Techniques on Small-Signal Parameters of X-Band Low-Noise Amplifier
Autor:
Igor M. Dobush, A. S. Salnikov, D. V. Bilevich, A. A. Kalentyev, A. A. Metel, I. S. Vasil’evskii, Aleksandr E. Goryainov, Artem A. Popov
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
In most cases researchers consider existing de-embedding techniques in terms of characterization accuracy of the monolithic microwave integrated circuit component where an emphasis is put on the upper limit of the frequency range. In real practice, w
Autor:
Aleksandr E. Goryainov, Artem A. Popov, A. A. Metel, A. S. Salnikov, A. A. Kalentyev, D. V. Bilevich, Igor M. Dobush
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 30
Autor:
A. S. Salnikov, D. V. Bilevich, A. A. Kalentyev, Igor M. Dobush, A. A. Popov, A. A. Metel, Aleksandr E. Goryainov
Publikováno v:
2019 Dynamics of Systems, Mechanisms and Machines (Dynamics).
In this paper we overview the common parasitic extraction techniques that have been widely applied for the small-signal GaAs pHEMT modeling. Using the reviewed techniques and their combinations several small signal models have been built and compared
Autor:
Aleksandr E. Goryainov, A. S. Salnikov, Artem A. Popov, A. A. Kalentyev, D. V. Bilevich, Igor M. Dobush
Publikováno v:
2019 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON).
With increasing complexity of manufacturing technology and semiconductor devices it becomes extremely important to make a connection between process parameters and characteristics of integrated components. Over the past 10 years, a lot of research ha