Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Igor M. Chernev"'
Autor:
Hirofumi Hoshida, Naofumi Nishikawa (尚史西川), Nikolay G. Galkin, Andrey Gerasimenko, Igor M. Chernev, Yoshikazu Terai, Keisuke Ohdaira, Alexander V. Shevlyagin, Anton K. Gutakovskii
Publikováno v:
Solar Energy. 211:383-395
n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4bf7fd4ed8c49b5c30287799c3273e7
https://doi.org/10.1016/j.solener.2020.09.085
https://doi.org/10.1016/j.solener.2020.09.085
Autor:
Nikolay G. Galkin, Konstantin N. Galkin, Dmitrii L. Goroshko, Sergei A. Dotsenko, Oleg V. Kropachev, Igor M. Chernev, Evgenii Yu Subbotin, Aleksey Yu Alekseev, Dmitry B. Migas, Zsolt Fogarassy, Bela Pecz, Anton K. Gutakovskii
Publikováno v:
Japanese Journal of Applied Physics. 62:SD0803
Single-phase films of semiconductor and semimetallic calcium silicides (Ca2Si, CaSi, and CaSi2), as well as films with a significant contribution of Ca5Si3 and Ca14Si19 silicides, were grown on single-crystal silicon and sapphire substrates. The anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe72c3468b2c68226f8ef3bdb3f8b48
https://doi.org/10.35848/1347-4065/aca0fd
https://doi.org/10.35848/1347-4065/aca0fd
Autor:
Igor M. Chernev, E.A. Chusovitin, A.A. Usenko, Vladimir Khovaylo, D. L. Goroshko, Konstantin N. Galkin, Nikolay G. Galkin, Alexander V. Shevlyagin
Publikováno v:
Defect and Diffusion Forum. 386:3-8
The growth, structure, optical, electrical and thermoelectric properties of calcium silicides of various compositions on silicon substrates with (100) and (111) orientations were experimentally studied. It was found that when the atoms of Ca and Si a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44473b1ca37f17fdc031d99b13005219
https://doi.org/10.4028/www.scientific.net/ddf.386.3
https://doi.org/10.4028/www.scientific.net/ddf.386.3
Autor:
Igor M. Chernev, Béla Pécz, Andrea Németh, Konstantin N. Galkin, Zoltán Osváth, László Dózsa, Zs. Zolnai, S.A. Dotsenko, N. G. Galkin
Publikováno v:
Applied Surface Science. 405:111-118
Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg 2 Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backsca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1aa7a2a68434851d36fb38f5d610a43
https://doi.org/10.1016/j.apsusc.2017.01.299
https://doi.org/10.1016/j.apsusc.2017.01.299
Autor:
A. Yu. Ustinov, A. M. Maslov, S. A. Dotsenko, S. A. Kitan, Alexander V. Shevlyagin, Andrey V. Gerasimenko, A. S. Gouralnik, E. A. Koblova, Igor M. Chernev, N. G. Galkin, Konstantin N. Galkin, V. M. Il'yashenko
Publikováno v:
Applied Surface Science. 439:282-284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4fa24c71816c7651480884e76eb1b8
https://doi.org/10.1016/j.apsusc.2017.12.237
https://doi.org/10.1016/j.apsusc.2017.12.237
Autor:
Anton K. Gutakovskii, Alexander Yu. Ustinov, Alexander V. Shevlyagin, Alexander S. Gouralnik, Igor M. Chernev, Andrey V. Gerasimenko
Publikováno v:
Materials Chemistry and Physics. 258:123903
Mg2Si films have been grown on Si(111) and Si(001) surfaces at ~ 387–477 °C by ultra-fast deposition in vacuum. The original pulse-type evaporator used allows Mg deposition rates of ~103–104 nm/s which provide effective accumulation of Mg on hot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::204ed55d1f9065c20e75a0662c7c5c08
https://doi.org/10.1016/j.matchemphys.2020.123903
https://doi.org/10.1016/j.matchemphys.2020.123903
Autor:
Igor M. Chernev, Yuri N. Kulchin, Dmitrii S. Yatsko, E. P. Subbotin, Konstantin N. Galkin, Nikolay G. Galkin, E.A. Chusovitin
Publikováno v:
Solid State Phenomena. 247:158-167
Investigations of crystal structure, microstructure and composition of laser welded coatings of bronze, IN625, PGSR-4 and stainless steel alloys on non-magnetic substrates have shown that from the raw alloy powders (wire) the additional crystalline p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fec4f1d8c3ac50995c00c8c578d9169a
https://doi.org/10.4028/www.scientific.net/ssp.247.158
https://doi.org/10.4028/www.scientific.net/ssp.247.158
Publikováno v:
Solid State Phenomena. 247:66-72
Thin Mg2Ge films were grown using two methods: a co-deposition of Ge and Mg on Si substrate kept at room temperature followed by annealing at 200 °C (solid phase epitaxy – SPE) and reactive deposition epitaxy (RDE) of Ge and Mg on Si at 200 °C. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86beadc2fffca29826a116f2960926ac
https://doi.org/10.4028/www.scientific.net/ssp.247.66
https://doi.org/10.4028/www.scientific.net/ssp.247.66
Autor:
Igor M. Chernev, Nikolay G. Galkin, D. L. Goroshko, E.A. Chusovitin, Konstantin N. Galkin, Alexander V. Shevlyagin
Publikováno v:
Solid State Phenomena. 247:61-65
An array of GaSb nanocrystallites (NCs) was formed on Si(001) substrate by solid-phase epitaxy at 500 °C. Owing to the embedded GaSb NCs, p+‑Si/NC‑GaSb/n‑Si mesa diode spectral sensitivity has extended up to 1.6 µm at room temperature, and it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13294c6d5dd89e027e77c5d2d7beb787
https://doi.org/10.4028/www.scientific.net/ssp.247.61
https://doi.org/10.4028/www.scientific.net/ssp.247.61
Autor:
Igor M. Chernev, Alexander V. Shevlyagin, E.A. Chusovitin, Nikolay G. Galkin, Konstantin N. Galkin, D. L. Goroshko
Publikováno v:
Solid State Phenomena. 245:72-79
Formation of GaSb by means of solid phase epitaxy of amorphous Ga:Sb (1:1) layer on Si (001) substrate at 500 °C has been studied. At amorphous layer thickness of 16 nm, a continuous nanocrystalline layer of GaSb was formed. Decreasing of amorphous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0f8bff8abfd74fda9445d0adaaf74ac
https://doi.org/10.4028/www.scientific.net/ssp.245.72
https://doi.org/10.4028/www.scientific.net/ssp.245.72