Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Igor Kasko"'
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The novel Direct Pressed Die (DPD) technology enables design and assembly of high performance module suitable for integration of SiC MOSFET devices. In order to provide a high module power required, e.g., for automotive application in main train, the
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A holistic approach taking benefit from optimization of chip, assembly technology and module design was utilized to exploit the performance potential of SiC power modules. A novel MOSFET SiC module (1200V, 400A) with extremely low inductance (1.4nH)
Autor:
Konrad Samwer, Cay Uwe Pinnow, Igor Kasko, Nicolas Nagel, Franz Jahnel, Ulrich Geyer, Robert Primig, Christine Dehm, Michael Seibt
Publikováno v:
Integrated Ferroelectrics. 37:29-38
High quality IrO2 films are of great interest as electrodes and oxygen barrier layers for PZT and SBT based integrated non-volatile ferroelectric memories. The investigated IrO2 films were reactively DC-sputtered in an Ar/O2 atmosphere. Generic curve
Autor:
Manuela Schiele, Christine Dehm, Carlos Mazure, Barbara Hasler, Walter Hartner, Günther Schindler, Renate Bergmann, Volker Weinrich, Igor Kasko, Marcus Kastner
Publikováno v:
Integrated Ferroelectrics. 26:197-213
Ferroelectric memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties like non-volatility, small DRAM-like cell size, fast read and write as well as low voltage/low power behavior. Althou
Autor:
Thomas Mikolajick, Christine Dehm, Michael Seibt, F. Jahnel, Konrad Samwer, N. Nagel, Igor Kasko, C. U. Pinnow, U. Geyer
Publikováno v:
Journal of Applied Physics. 91:1707-1709
The 18O tracer diffusion method was used to investigate oxygen diffusion in reactively dc-sputtered IrO2 films. The profile measurements were done by secondary ion mass spectrometry. For the investigation of the oxygen diffusivity in the samples a te
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1857
IrO2 and Ir thin films have been deposited by dc sputtering in Ar/O2- and pure Ar atmospheres, respectively. The microstructural characterization of the films was done by x-ray diffraction and transmission electron microscopy and showed that (nano-)c
Autor:
R. F. Schnabel, M. Rohner, U. Scheler, A. Hauser, S. Poppa, G. Mainka, Peter Bosk, Igor Kasko, C. Sama, H.D. Mullegger, Thomas Mikolajick, Christine Dehm, Volker Weinrich, Gerhard Beitel, Nicolas Nagel
Publikováno v:
Scopus-Elsevier
A novel integration scheme for the formation of stack capacitor electrodes and diffusion barriers is presented. The concept makes use of chemical mechanical polishing of noble metals and allows the integration of a dielectric barrier. Electrical data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a11cc1b1672d49002f132b2cb78e92ec
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034848718&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034848718&partnerID=MN8TOARS
Autor:
Thomas Mikolajick, Igor Kasko, Christine Dehm, Manfred Mört, Marcus Kastner, Günther Schindler, Rainer Waser, Walter Hartner
Publikováno v:
Scopus-Elsevier
At crystallization temperatures of about 800°C bismuth layered oxide SrBi2Ta2O9 (SBT) deposited by MOD develops good ferroelectric properties for use in FeRAM devices. But scaling down the film thickness of SBT below 150 nm only shorts are measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4861e6362a59161b5311aaeff8eae0e
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034447931&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034447931&partnerID=MN8TOARS
Autor:
Thomas Mikolajick, Christine Dehm, Manfred Moert, Nicolas Nagel, Igor Kasko, Walter Hartner, Cay-Uwe Dr. Pinnow, Carlos A. Mazure
Publikováno v:
Scopus-Elsevier
Ferroelectric random access memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties such as nonvolatility, small DRAM - like cell size, fast read and write as well as low voltage / low po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48eb5c34fbe5d9fd8e52485c27a4e9e2
http://www.scopus.com/inward/record.url?eid=2-s2.0-24144436212&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-24144436212&partnerID=MN8TOARS
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