Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Igor Bouchoms"'
Autor:
Wim de Boeij, Par Broman, Marjan Leonardus Catharina Hoofman, Joost Smits, Jan-Jaap Kuit, Matthew McLaren, Roelof de Graaf, Haico Victor Kok, Martijn Leenders, Remi Pieternella, Igor Bouchoms
Publikováno v:
SPIE Proceedings.
In this paper we report on the performance enhancements on the NXT immersion scanner platform to support the immersion lithography roadmap. We particular discuss scanner modules that enable future overlay and focus requirements. Among others we descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8a2839e86295ff8aad6eda7f752827
https://doi.org/10.1117/12.2021397
https://doi.org/10.1117/12.2021397
Autor:
Igor Bouchoms, Stefan Weichselbaum, Pieter Gunter, Jan Jaap Kuit, Martijn Leenders, Rob van Ballegoij, Bart Dinand Paarhuis, Marcel Hendrikus Maria Beems, Roelof de Graaf, Martin Verhoeven, Robert Kazinczi
Publikováno v:
SPIE Proceedings.
Mainstream high-end lithography is currently focusing on 32 nm node and 22 nm node where 1.35 NA immersion technology is well established for the most critical layers. Double-patterning and spacer-patterning techniques have been developed and are bei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0136c1d71027d5e5724d07e1917c23d7
https://doi.org/10.1117/12.915807
https://doi.org/10.1117/12.915807
Autor:
Erwin Verdurmen, Roelof de Graaf, Igor Bouchoms, Jan Mulkens, Marcel Hendrikus Maria Beems, Frank Bornebroek, Nils Dieckmann, Pieter Gunter, Hans Jasper, Sander de Putter
Publikováno v:
SPIE Proceedings.
The semiconductor industry has adopted water-based immersion technology as the mainstream high-end litho enabler for 5x-nm and 4x-nm devices. Exposure systems with a maximum lens NA of 1.35 have been used in volume production since 2007, and today ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f5e3128649ca74097748d69107344d
https://doi.org/10.1117/12.845597
https://doi.org/10.1117/12.845597
Autor:
Steve Hansen, Igor Bouchoms, Melchior Mulder, Jörg Zimmermann, Anthony Ngai, Marieke van Veen, Anita Bouma, Andre Engelen
Publikováno v:
SPIE Proceedings.
The practical limit of NA using water as immersion liquid has been reached. As a consequence, the k1 in production for the coming technology nodes will decrease rapidly, even below k1=0.25.This means that new imaging solutions are required. Double pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07cfaf12daa434f3440a65e83f7d781a
https://doi.org/10.1117/12.814155
https://doi.org/10.1117/12.814155
Autor:
Jan Mulkens, Richard Moerman, Roelof de Graaf, Herman Boom, Patrick Thomassen, Paul Liebregts, Frank Bernhard Sperling, Marieke van Veen, Igor Bouchoms, Andre Engelen, Wolfgang Emer
Publikováno v:
SPIE Proceedings.
Immersion lithography started to become the main workhorse for volume production of 45-nm devices, and while waiting for EUV lithography, immersion will continue to be the main technology for further shrinks. In a first step single exposure can be st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2caf32fc1262769adaa00faa38de7a01
https://doi.org/10.1117/12.813649
https://doi.org/10.1117/12.813649
Publikováno v:
SPIE Proceedings.
Proximity effects in optical lithography are under investigation for quite some time. Most of these studies focus on the understanding of the origin of the CD-through- pitch variations and are performed for a single point in the exposure field. Knowi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5d9820fbae05d5a6fbf2f1be46801b8
https://doi.org/10.1117/12.474571
https://doi.org/10.1117/12.474571
Publikováno v:
SPIE Proceedings.
This work analyzes the contributions to CD variation by building 3 predictive models that describe linewidth variation. The first model uses an exposure and focus budget analysis to create distributions that are used as input into a Monte Carlo analy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f284c6b5de58781c62c2705e8421cc5
https://doi.org/10.1117/12.354328
https://doi.org/10.1117/12.354328
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