Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ievgen Boturchuk"'
Autor:
Thomas Walter, Mohammad Zareghomsheh, Golta Khatibi, Vladimir N. Popok, Peter K. Kristensen, Ievgen Boturchuk, Sabine Schwarz
Publikováno v:
Materials & Design, Vol 213, Iss , Pp 110319- (2022)
Wide bandgap semiconductors such as group III-nitrides and SiC are considered as key materials for the fabrication of smaller, more reliable and efficient power electronics. Fabrication of robust and durable power devices requires an optimized design
Externí odkaz:
https://doaj.org/article/45b7c2551a324d05bc8965eafa878d19
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025322-025322-6 (2019)
The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius
Externí odkaz:
https://doaj.org/article/9f60c7a6f8de48fa82ba7833b0fd25ef
Autor:
Michael Stöger-Pollach, Thomas Walter, Kjeld Møller Pedersen, Golta Khatibi, Vladimir Popok, Brian Julsgaard, Sabine Schwarz, Ievgen Boturchuk
Publikováno v:
Boturchuk, I, Walter, T, Julsgaard, B, Khatibi, G, Schwarz, S, Stöger-Pollach, M, Pedersen, K & Popok, V N 2019, ' Structure and properties of Ta/Al/Ta and Ti/Al/Ti/Au multilayer metal stacks formed as ohmic contacts on n-GaN ', Journal of Materials Science: Materials in Electronics, vol. 30, no. 19, pp. 18144-18152 . https://doi.org/10.1007/s10854-019-02167-2
Formation of ohmic contacts to GaN is of high practical importance for device fabrication. Due to the wide band gap, formation of multilayer metal structures is required to make electrical connections with low contact resistance. The paper presents a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a721f45237602caa6b07ff37ed10708
https://vbn.aau.dk/ws/files/383856458/Accepted_manuscript_JMS2.pdf
https://vbn.aau.dk/ws/files/383856458/Accepted_manuscript_JMS2.pdf
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025322-025322-6 (2019)
Boturchuk, I, Scheffler, L J, Larsen, A N & Julsgaard, B 2019, ' Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN ', AIP Advances, vol. 9, no. 2, 025322 . https://doi.org/10.1063/1.5086796
Boturchuk, I, Scheffler, L J, Larsen, A N & Julsgaard, B 2019, ' Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN ', AIP Advances, vol. 9, no. 2, 025322 . https://doi.org/10.1063/1.5086796
The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around E C - 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e04000bfab5ce5c3f9aa0ab1200b7709
https://doaj.org/article/9f60c7a6f8de48fa82ba7833b0fd25ef
https://doaj.org/article/9f60c7a6f8de48fa82ba7833b0fd25ef
Publikováno v:
Boturchuk, I, Scheffler, L J, Larsen, A N & Julsgaard, B 2018, ' Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation ', Physica Status Solidi. A: Applications and Materials Science, vol. 215, no. 9, 1700516 . https://doi.org/10.1002/pssa.201700516
Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b9eae084594b0b6a8d9709b31446700
https://doi.org/10.1002/pssa.201700516
https://doi.org/10.1002/pssa.201700516