Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Idris Sabtu"'
Publikováno v:
Microelectronics Journal. 37:1115-1118
Characterizations on the pseudomorphic High Electron Mobility Transistor structure under High-Resolution X-ray Diffraction (HRXRD) have been carried out at room temperature. Variation of Al contents in AlxGa1� xAs alloys has been found to show a sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::675cdac6ef3be5659211981e630b0250
https://doi.org/10.1016/j.mejo.2006.03.006
https://doi.org/10.1016/j.mejo.2006.03.006
Autor:
Hariyadi Soetedjo, Y. Mohd Razman, A.F. Awang Mat, Idris Sabtu, J. Mohd Sazli, O. Mohd Nizam, Ashaari Yusof
Publikováno v:
Microelectronics Journal. 37:480-482
Various pseudomorphic High Electron Mobility Transistor (pHEMT) structures of AlGaAs/InGaAs alloys have been observed their current–voltage behavior. The tungsten probes were used for a measurement the structures by ramping the voltage from −5 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5caedd219ede6664786839dac223aba9
https://doi.org/10.1016/j.mejo.2005.09.025
https://doi.org/10.1016/j.mejo.2005.09.025
Autor:
Nor Azlian Abdul Manaf, Mohd Sharizal Alias, Sufian Mousa Mitani, Farha Maskuriy, Idris Sabtu, Mohd Razman Yahya, Abdul Manaf Hashim, Vijay K. Arora
Publikováno v:
AIP Conference Proceedings.
A comprehensive study has been done to investigate the lasing characteristic of 1.3 µm GaInNAs quantum well (QW) lasers. We have varied the Nitrogen (N) compositions in GaInNAs QW with N=1.0≤x≤2.0. Significant improvement of lasing wavelength, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734e94eb74f84dcf869616554210b86f
https://doi.org/10.1063/1.3587014
https://doi.org/10.1063/1.3587014
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics.
Characterizations on the surface roughness of metamorphic high electron mobility transistor structure (MHEMT) denoted as 2211_#1 (step-graded metamorphic buffer) and 2212_#1 (linearly-graded metamorphic buffer) have been carried out using Atomic Forc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b452262e77f874bd18160041a4919144
https://doi.org/10.1109/smelec.2008.4770375
https://doi.org/10.1109/smelec.2008.4770375
Autor:
M. Norman Fadhil Idham, A.M. Abdul Fatah, Hariyadi Soetedjo, Idris Sabtu, A.R. Ahmad Ismat, Y. Mohamed Razman, O. Nurul Afzan
Publikováno v:
2006 IEEE International Conference on Semiconductor Electronics.
This paper presents a novel technique to obtain device characteristics of high electron mobility transistors (HEMT) structures based on the backgate contact method, thus avoiding the need for complete gate formation. The gate contact was prepared on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b51562132679f959d6c6a9b8fef8cd
https://doi.org/10.1109/smelec.2006.380733
https://doi.org/10.1109/smelec.2006.380733
Publikováno v:
2004 IEEE International Conference on Semiconductor Electronics.
In this report SiO/sub 2/ thin films were prepared by a sol-gel processing as sensitive humidity elements. Sol was prepared using tetraethylorthosilicate as a starting precursor. LiCl was added into the sol as a dopant to modify the humidity sensitiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::431a432e02c4ee9c3fd9738c26ce2f78
https://doi.org/10.1109/smelec.2004.1620962
https://doi.org/10.1109/smelec.2004.1620962
Publikováno v:
2004 IEEE International Conference on Semiconductor Electronics; 2004, p3-3, 1p