Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Iddawela, Sahani A."'
Autor:
Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L., Hickey, Danielle Reifsnyder, Sinnott, Susan B, Law, Stephanie
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it sui
Externí odkaz:
http://arxiv.org/abs/2403.12265
Autor:
Yu, Mingyu, Wang, Jiayang, Iddawela, Sahani A., McDonough, Molly, Thompson, Jessica L., Sinnott, Susan B, Hickey, Danielle Reifsnyder, Law, Stephanie
GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D)
Externí odkaz:
http://arxiv.org/abs/2401.10425
Autor:
Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L., Reifsnyder Hickey, Danielle, Sinnott, Susan B., Law, Stephanie
Publikováno v:
ACS Nano; 7/2/2024, Vol. 18 Issue 26, p17185-17196, 12p