Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Ida E. Tyschenko"'
Autor:
Vladimir P. Popov, Fedor V. Tikhonenko, Valentin A. Antonov, Ida E. Tyschenko, Andrey V. Miakonkikh, Sergey G. Simakin, Konstantin V. Rudenko
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 291 (2021)
Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO2/Al2O3/HfO2
Externí odkaz:
https://doaj.org/article/6b918bbffc3c4ae8a673b38a461c32e6
Publikováno v:
Semiconductors. 55:289-295
The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium d
Autor:
R. Zhang, Ida E. Tyschenko
Publikováno v:
Semiconductors. 55:76-85
Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optic
Publikováno v:
Semiconductors. 53:493-498
The Raman spectra of SiO2 films containing InSb spherical nanocrystals produced by ion-beam synthesis are studied. TO- and LO-like modes in the spectra of the InSb nanocrystals are detected at frequencies of 187 and 195 cm–1, respectively. The shif
Publikováno v:
Semiconductors. 53:241-245
The anodic oxidation rate of silicon-on-insulator films fabricated by hydrogen transfer is studied as a function of the temperature of subsequent annealing. It is established that the oxidation rate of transferred silicon-on-insulator films is five t
Publikováno v:
Semiconductors. 53:60-64
The hydrophilicity of surfaces and the bonding energy of silicon and sapphire wafers at the temperature of joining 50°C are studied. It is established that heating of the Si and Al2O3 wafers to 50°C is accompanied by an increase in the degree of hy
Autor:
Ida E. Tyschenko, Konstantin V. Rudenko, Vladimir Popov, Fedor V. Tikhonenko, Sergey G. Simakin, Andrey V. Miakonkikh, Valentin Antonov
Publikováno v:
Nanomaterials, Vol 11, Iss 291, p 291 (2021)
Nanomaterials
Volume 11
Issue 2
Nanomaterials
Volume 11
Issue 2
Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The &ldquo
diode-like&rdquo
currents through the symmetric atomic layer deposited (ALD)
diode-like&rdquo
currents through the symmetric atomic layer deposited (ALD)
Publikováno v:
Materials Letters. 306:131027
The formation of InSb nanocrystals at the bonding Si/SiO2 interface of silicon-on-insulator structure was obtained as a result of the In and Sb atom diffusion from the ion-implanted SiO2 and Si regions, respectively, toward the interface. After the a
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
This work investigates the features of the formation of a silicon-sapphire interlayer heterointerface obtained by direct splicing, both with an intermediate amorphous dielectric (Hf, Zr, Al; AlN oxides) and without it. The results of structural and e
Autor:
Alexander Fedotov, Ida E. Tyschenko, Karolina Czarnacka, Pawel Zukowsk, Tomasz N. Koltunowicz
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
A.c. current conductivity, capacitance, phase angle and dielectric loss tangent were studied for MOS SOI structures with ion-synthesized in the buried SiO2 layer InSb nanoparticles. Films conductivity nature change was detected at the temperature Т=