Zobrazeno 1 - 10 of 16 pro vyhledávání: '"Ichitaro Waki"'
1
Direct Gas-phase CO2Reduction for Solar Methane Generation Using a Gas Diffusion Electrode with a BiVO4:Mo and a Cu-In-Se Photoanode
Autor: Jia Qingxin, Ichitaro Waki, Shinichi Tanabe
Publikováno v: Chemistry Letters. 47:436-439
Solar methane generation was demonstrated using a GDE loaded with Cu and Ag as a cathode, and a CoPi/BiVO4:Mo film as a photoanode combined with a CIS-PV. Instead of using dissolved CO2 in a solution, gas-phase CO2 was utilized by directly flowing it
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::726b2e307d2aec06969a88ea9ff76bb9
https://doi.org/10.1246/cl.171094
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3
Process design of the pulse injection method for low-temperature metal organic vapor phase epitaxial growth of AlN at 800°C
Autor: Masakazu Sugiyama, Yoshiaki Nakano, Hassanet Sodabanlu, Ichitaro Waki, Jung-Seung Yang, Yukihiro Shimogaki
Publikováno v: Journal of Crystal Growth. 311:383-388
The pulse injection (PI) growth method in which trimethylaluminium (TMAl) and NH 3 are alternately supplied was used to grow AlN layer at 800 °C. It was found that the process parameters in the PI method such as TMAl supply time ( τ TMAl ), TMAl pa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11f0e3ff7f22ab21e95936f7a89ecd3d
https://doi.org/10.1016/j.jcrysgro.2008.10.086
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4
Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm
Autor: Aurelian David, Rajat Sharma, Ichitaro Waki, Claude Weisbuch, Shuji Nakamura, P. Morgan Pattison
Publikováno v: physica status solidi (a). 203:1783-1786
A gallium nitride based micro-cavity light emitting diode emitting at a peak wavelength of 498 nm has been fabricated. The epitaxial structure was grown by metalorganic chemical vapor deposition, and the device was fabricated using a laser lift-off p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4bad4a1c54e53ed273ae970d29a70416
https://doi.org/10.1002/pssa.200565408
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5
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
Autor: Michael Iza, James S. Speck, Ichitaro Waki, Shuji Nakamura, Steven P. DenBaars
Publikováno v: Japanese Journal of Applied Physics. 45:720-723
Inductively coupled plasma (ICP) dry etching of metalorganic chemical vapor deposition-grown Ga-face and N-face GaN was performed under various etching conditions. Unlike wet etching, etch rates of the N-face GaN were close to those of the Ga-face Ga
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68558afaf4eeef324050e53bd123e23b
https://doi.org/10.1143/jjap.45.720
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7
Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
Autor: Ichitaro Waki, Jung-Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano
Publikováno v: Japanese Journal of Applied Physics. 46:L927-L929
High quality AlN layer could be grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) by pulse injection (PI) method in which trimethylaluminium (TMAl) and NH3 are alternately supplied. Crystal quality of AlN layer grown by PI method (PI-AlN)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5daa5888dbb15bff7dda23dedb8274ec
https://doi.org/10.1143/jjap.46.l927
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8
Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy
Autor: Chaiyasit Kumtornkittikul, Yukihiro Shimogaki, Ichitaro Waki, Yoshiaki Nakano
Publikováno v: Applied Physics Letters. 82:4465-4467
Two-hundred-period high-quality AlN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy are studied using high-resolution x-ray diffraction, transmission electron microscopy, and optical transmission spectroscopy. Excellent in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec3edefa3c13b5768170dfb0750a6b61
https://doi.org/10.1063/1.1586473
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9
Low-Temperature Activation of Mg-Doped GaN with Pd Thin Films
Autor: Ichitaro Waki, Masaharu Oshima, Mineo Okuyama, Hisayuki Miki, Hiroshi Fujioka
Publikováno v: physica status solidi (b). 228:391-393
The activation of metalorganic chemical vapor deposition (MOCVD)-grown Mg-doped GaN by N 2 annealing with thin Pd films has been investigated, p-type GaN with a hole concentration of 7 x 10 16 cm -3 has been obtained at an annealing temperature as lo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e13c6ddb3ed45825f45e28a91819ebd3
https://doi.org/10.1002/1521-3951(200111)228:2<391::aid-pssb391>3.0.co
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10
Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells
Autor: Masakazu Sugiyama, H. Otani, Yoshiaki Nakano, Ning Li, Ichitaro Waki, Chaiyasit Kumtornkittikul
Publikováno v: The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..
We propose waveguide structures for ultrafast optical devices utilizing intersubband absorption in GaN-based multiple quantum wells grown with metalorganic vapor phase epitaxy. The proposed structure can efficiently enhance absorption in the GaN/AlN
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fce95336fcbd6fcb1da94b1ea51f7ceb
https://doi.org/10.1109/leos.2004.1363150
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