Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Ichirou Nomura"'
Publikováno v:
Journal of Crystal Growth. 512:96-99
MgSe/ZnCdSe superlattices (SLs) and n-MgZnCdSe quaternaries were investigated as an n-cladding layer material of II-VI compound semiconductor optical devices on InP substrates. n-type samples consisting of n-doped ZnCdSe and n-MgSe/ZnCdSe SL or n-MgZ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2dbbf5f89e0439330d8c146543910dd
https://doi.org/10.1016/j.jcrysgro.2019.02.014
https://doi.org/10.1016/j.jcrysgro.2019.02.014
Autor:
Yudai Momose, Ichirou Nomura
Publikováno v:
Journal of Electronic Materials. 47:4515-4518
Conduction band discontinuity (ΔEc) of MgSe/ZnCdSe heterojunctions were evaluated using n–i–n diodes consisting of an undoped i-MgSe layer sandwiched by n-doped ZnCdSe layers. The n–i–n diodes were fabricated on InP substrates by molecular b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f471524727d2d87b25eb2a88b5e847
https://doi.org/10.1007/s11664-018-6389-0
https://doi.org/10.1007/s11664-018-6389-0
Publikováno v:
physica status solidi c. 13:665-668
The application of indium tin oxide (ITO) as the p-cladding layer of II-VI compound semiconductor laser diodes (LDs) on InP substrates was investigated. The waveguide analysis of the LD structures revealed that the optical confinement effect around t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e10b06a029c8b26592ec9c285c654c
https://doi.org/10.1002/pssc.201510254
https://doi.org/10.1002/pssc.201510254
Publikováno v:
Journal of Crystal Growth. 425:199-202
N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II–VI compound semiconductor optical devices on InP substrates. Contact resistances ( R c ) between the contact layers and several electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa16136018565241cd493caa56917b24
https://doi.org/10.1016/j.jcrysgro.2015.02.042
https://doi.org/10.1016/j.jcrysgro.2015.02.042
Autor:
Toshiki Kobayashi, Tomohiro Shiraishi, Katsumi Kishino, Shingo Takamatsu, Keisuke Murakami, Ichirou Nomura
Publikováno v:
physica status solidi c. 11:1213-1217
The photoluminescence (PL) characteristics of ZnCdSe/BeZnTe type-II superlattices (SLs) with various thickness combinations of ZnCdSe and BeZnTe layers were investigated at room temperature. High PL peak intensities that were comparable to those of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11d06b223dc8b8bfe95d0405214c926c
https://doi.org/10.1002/pssc.201300634
https://doi.org/10.1002/pssc.201300634
Autor:
Keisuke Murakami, Katsumi Kishino, Tomohiro Shiraishi, Shingo Takamatsu, Ichirou Nomura, Toshiki Kobayashi
Publikováno v:
physica status solidi c. 11:1278-1281
Indium tin oxide (ITO) transparent electrodes formed on II-VI compound semiconductor optical devices on InP substrates were characterized. Two kinds of ZnCdSe/BeZnTe p-n diode devices with a different p-contact layer (i.e., p-ZnTe and p-ZnSeTe layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa421440c3f5a69866d8f2d1c447bc1
https://doi.org/10.1002/pssc.201300620
https://doi.org/10.1002/pssc.201300620
Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II–VI compound superlattices on InP substrates
Autor:
Ichirou Nomura, Tomohiro Yamazaki, Koichi Hayami, Masaki Kato, Katsumi Kishino, Hiroaki Hayashi
Publikováno v:
Journal of Crystal Growth. :273-276
MgSe/BeZnSeTe II–VI compound superlattices (SLs) were grown on InP substrates by molecular beam epitaxy (MBE). In the growth, Zn molecular beam irradiation was performed at each hetero-interface between MgSe and BeZnSeTe layers to suppress in-plane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e747b1015e0a9283507c3637a2cc4d2a
https://doi.org/10.1016/j.jcrysgro.2006.11.183
https://doi.org/10.1016/j.jcrysgro.2006.11.183
Publikováno v:
physica status solidi c. 3:857-860
A novel p-type doping method for MgZnCdSe on InP substrates was proposed. In this method, highly p-type-doped thin layers, such as N-doped ZnTe, are inserted at proper intervals into MgZnCdSe layers. The inserted thin layer emits holes and the p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56527c5813c15392f193b4f37247f8b7
https://doi.org/10.1002/pssc.200564615
https://doi.org/10.1002/pssc.200564615
Publikováno v:
physica status solidi (b). 243:955-958
ZnCdTe/MgZnSeTe laser diodes (LDs) were fabricated on ZnTe substrates by molecular beam epitaxy. The LDs were characterized under single short pulse current injections at low temperature. Yellow-green single-mode lasing emissions at 564 nm were succe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d18018cadc9bec605928916b3a03669
https://doi.org/10.1002/pssb.200564721
https://doi.org/10.1002/pssb.200564721
Publikováno v:
physica status solidi (b). 243:924-928
Aging characteristics of BeZnSeTe yellow light emitting diodes (LEDs) fabricated on InP substrates by molecular beam epitaxy were investigated under direct current injections at room temperature. It was shown that the decay speed of the light output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7543c50977c376caf774e0df798a4f28
https://doi.org/10.1002/pssb.200564664
https://doi.org/10.1002/pssb.200564664