Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Ibnu Syuhada"'
Publikováno v:
IEEE Access, Vol 12, Pp 120087-120097 (2024)
This work proposes a comprehensive analytical model for two-dimensional molybdenum disulfide (MoS2) field-effect transistors (FETs). This model incorporates single-particle and transport relaxation times intended to investigate the dominant scatterin
Externí odkaz:
https://doaj.org/article/7290aa70394e49b1a3b3d7a4bfa1bd3b
Autor:
Ibnu Syuhada, Nikodemus Umbu Janga Hauwali, Ahmad Rosikhin, Euis Sustini, Fatimah Arofiati Noor, Toto Winata
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract In this work, we present the bond order redefinition needed to reduce the inherent noise in order to enhance the accuracy of molecular dynamics simulations. We propose defining the bond order as a fraction of energy distribution. It happens
Externí odkaz:
https://doaj.org/article/ef4b0430231c4cb79ad1a8e2eb3688d7
Autor:
Fatimah Arofiati Noor, Ibnu Syuhada, Toto Winata, Feng Yu, Muhammad Fahlesa Fatahilah, Hutomo Suryo Wasisto, Khairurrijal Khairurrijal
Publikováno v:
IEEE Access, Vol 9, Pp 2913-2923 (2021)
In this report, we study nonlinear electrical behaviors found in vertical-architecture transistors based on wrap-around-gated gallium nitride (GaN) nanowires (NWs) by extending a one-dimensional case of the Landauer-Büttiker formula. Here, the GaN
Externí odkaz:
https://doaj.org/article/187a75ce9b324f79ba0998d627e5ec10
Publikováno v:
Materials Today: Proceedings. 44:3305-3308
A first principle study with the density functional theory method has carried for parallelogram graphene nanoflakes. In this work, we used ABINIT package to calculate the fundamental properties of parallelogram graphene nanoflakes in the armchair and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1360b29a3b784b1072fcc8a094123ad5
https://doi.org/10.1016/j.matpr.2020.11.532
https://doi.org/10.1016/j.matpr.2020.11.532
Autor:
Ibnu Syuhada, Toto Winata, Hutomo Suryo Wasisto, Fatimah A. Noor, Khairurrijal Khairurrijal, Muhammad Fahlesa Fatahilah, Feng Yu
Publikováno v:
IEEE Access. 9:2913-2923
In this report, we study nonlinear electrical behaviors found in vertical-architecture transistors based on wrap-around-gated gallium nitride (GaN) nanowires (NWs) by extending a one-dimensional case of the Landauer-Buttiker formula. Here, the GaN NW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::856c019535a24d5b5dae92dabfbe5846
https://doi.org/10.1109/access.2020.3047498
https://doi.org/10.1109/access.2020.3047498
Autor:
Nikodemus Umbu Janga Hauwali, Fatimah A. Noor, Ahmad Rosikhin, Toto Winata, Euis Sustini, Ibnu Syuhada
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Scientific Reports
Scientific Reports
In this work, we present the bond order redefinition needed to reduce the inherent noise in order to enhance the accuracy of molecular dynamics simulations. We propose defining the bond order as a fraction of energy distribution. It happens due to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::380ebae249426dbc1ef78cf8009a18ae
https://doi.org/10.1038/s41598-020-80217-0
https://doi.org/10.1038/s41598-020-80217-0
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 622:012015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e7cb0e526d652a8e68ffc33bc8242b9
https://doi.org/10.1088/1757-899x/622/1/012015
https://doi.org/10.1088/1757-899x/622/1/012015
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 578:012037
Graphene sheet is a single-atom thick material and attracts great interest due to its extraordinary physical properties, but it has zero bandgap. At the boundary of graphene sheet, two types of stable edges were the zigzag edge and armchair edge. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5223a89c8bce5e0b68820691ce098a2
https://doi.org/10.1088/1757-899x/578/1/012037
https://doi.org/10.1088/1757-899x/578/1/012037
Publikováno v:
Microelectronic Engineering. 216:111086
We present a compact model of the gate tunneling current in cylindrical surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on quantum mechanical correction. The model is physics-based and is given in an analytica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7574d57c46721f4d6e61ddd9f00a432
https://doi.org/10.1016/j.mee.2019.111086
https://doi.org/10.1016/j.mee.2019.111086
Publikováno v:
AIP Conference Proceedings.
The deposition process of copper onto silicon substrate was studied by the molecular dynamics method. Tersoff, MEAM, and Morse potentials were used to describe the interaction of Si-Si Cu-Cu, and Cu-Si, respectively. Deposition process was performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cee6083536ba5d9faa97c09488a2197a
https://doi.org/10.1063/1.4941505
https://doi.org/10.1063/1.4941505