Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ian Tolle"'
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
As technology nodes advance, the need for higher sensitivity optical inspection to identify critical defects has become extremely important for technology development. However, more sensitive optical inspection can induce more nuisance and hence more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a95a8e76724e333641aa7287a23cb8c2
https://doi.org/10.1117/12.2523963
https://doi.org/10.1117/12.2523963
Advanced defect inspection techniques for NFET and PFET defectivity at 7nm gate poly removal process
Autor:
Michael Daino, Ian Tolle
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain are not sufficiently protected, the etch can damage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e75753a195a865bf104d31ecca2d16
https://doi.org/10.1109/asmc.2018.8373197
https://doi.org/10.1109/asmc.2018.8373197
Autor:
Ankit Jain, Ian Tolle
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The use of design-based care areas on inspection tools [1, 2] to characterize defects has been well established in recent years. However, the implementation has generally been limited to specific engineering use cases, due to the complexity involved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d3c9dcddcd52a9fe074e6694fcad6e
https://doi.org/10.1109/asmc.2017.7969215
https://doi.org/10.1109/asmc.2017.7969215
Autor:
Balajee Rajagopalan, Ankit Jain, Jae Choo, Graham Jensen, Ronald Huang, Sumanth Kini, Amit Srivastava, Atul Bawari, Shiran Xiao, Ian Tolle, Hoang Nguyen, Michael Daino, Hirokazu Aizawa
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Semiconductor manufacturing of 14 nm devices has presented numerous engineering and manufacturing challenges from newly introduced FinFETs in the FEOL to double patterned trenches and self-aligned vias in the BEOL. Voids are a common defect found in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf93d6cbb0c97e02d9931cddac5a750
https://doi.org/10.1109/asmc.2016.7491104
https://doi.org/10.1109/asmc.2016.7491104
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The key to robust SPC control is the inline signals provided by metrology tools (e.g. CD-SEM, Overlay, film thickness measurement) and defect inspection tools (e.g. Surfscan, Broadband Plasma (BBP), Laser Scanning). Wafer defect inspection tools like
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c024c523670681ae5370b2faa335f5ea
https://doi.org/10.1109/asmc.2016.7491108
https://doi.org/10.1109/asmc.2016.7491108
Autor:
Amit Srivastava, Hoang Nguyen, Sang-Hyun Lee, Liton Dey, Ankit Jain, Ian Tolle, Sachin Gupta, Ronald Huang, Aleister Mraz, Sumanth Kini
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Different tool platforms are used in conjunction for patterned wafer inspection like 9xxx & 29xx provided by KLA Tencor. Depending on the sensitivity & throughput requirements, a chip fabrication plant mixes and matches the inline inspection strategi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56818d6823b27c467626584cd51ca0a0
https://doi.org/10.1109/asmc.2016.7491124
https://doi.org/10.1109/asmc.2016.7491124
Autor:
Ian Tolle, Lealon L. Martin
Publikováno v:
The International Journal of Advanced Manufacturing Technology. 64:555-577
In this work, we present an optimization-based methodology to identify network process–structure–property relationships in multiphase polymeric materials. A quantitative description of the material structure can be provided by x-ray and neutron s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e8b7b2801966bebcc6d95b085c2b4a
https://doi.org/10.1007/s00170-012-4427-2
https://doi.org/10.1007/s00170-012-4427-2
Autor:
Lealon L. Martin, Ian Tolle
Publikováno v:
Computers & Chemical Engineering. 35:2564-2578
In this work we present a novel computational approach for the extraction of underlying polymer structural component signatures and corresponding structural evolution through decomposition of multivariate X-ray scattering (SAXS/WAXS) datasets. Withou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1f519d842f7d564cca23c209aa5c7e
https://doi.org/10.1016/j.compchemeng.2011.03.027
https://doi.org/10.1016/j.compchemeng.2011.03.027
Publikováno v:
Industrial & Engineering Chemistry Research. 48:6137-6144
In this work, we present an optimization-based methodology to identify network structure−process relationships in polymeric materials, to provide a robust understanding of how processing conditions...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc52842446df6a7350afb90795ea737
https://doi.org/10.1021/ie8012715
https://doi.org/10.1021/ie8012715
Publikováno v:
Industrial & Engineering Chemistry Research; Jul2009, Vol. 48 Issue 13, p6137-6144, 8p