Zobrazeno 1 - 10
of 184
pro vyhledávání: '"Ian M. Povey"'
Publikováno v:
Polymers, Vol 13, Iss 10, p 1566 (2021)
Chitosan-based films have a diverse range of potential applications but are currently limited in terms of commercial use due to a lack of methods specifically designed to produce thin films in high volumes. To address this limitation directly, hydrog
Externí odkaz:
https://doaj.org/article/1a3a032f30a540769b1f2a32da04b7b8
Autor:
Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley, Farzan Gity
Publikováno v:
Crystals, Vol 11, Iss 2, p 160 (2021)
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the fi
Externí odkaz:
https://doaj.org/article/b4687f6106c14ab2a814c4d1d2f9e4d7
Publikováno v:
International Journal of Molecular Sciences; Volume 24; Issue 13; Pages: 11207
This work shows the electrochemical performance of sputter-deposited, binder-free lithium cobalt oxide thin films with an alumina coating deposited via atomic layer deposition for use in lithium-metal-based microbatteries. The Al2O3 coating can impro
Autor:
Lynette Keeney, Ian M. Povey
Publikováno v:
Tailored Functional Oxide Nanomaterials. :1-42
Autor:
Shóna Doyle, Louise Ryan, Melissa M. McCarthy, Mircea Modreanu, Michael Schmidt, Fathima Laffir, Ian M. Povey, Martyn E. Pemble
Publikováno v:
Materials Advances. 3:2896-2907
The importance of understanding the growth fundamentals of ZnO/TiO2nanolaminate structures deposited by atomic layer deposition is explored.
Publikováno v:
Journal of Electrochemical Science and Engineering
Volume 10
Issue 1
Journal of Electrochemical Science and Engineering, Vol 10, Iss 1 (2019)
Volume 10
Issue 1
Journal of Electrochemical Science and Engineering, Vol 10, Iss 1 (2019)
A modified, thermal atomic layer deposition process was employed for the pulsed chemical vapor deposition growth of vanadium pentoxide films using tetrakis (dimethylamino) vanadium and water as a co-reagent.Depositions were carried out at 350oC for 4
Autor:
Laurent Pedesseau, Mircea Modreanu, Philippe Schieffer, Antoine Létoublon, Jacky Even, Bruno Lépine, Pascal Turban, Alain Moréac, Olivier Durand, Bienlo Zerbo, Alain Rolland, Ian M. Povey
Publikováno v:
IEEE Xplore
44th International Semiconductor Conference (CAS 2021)
44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
44th International Semiconductor Conference (CAS 2021)
44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
International audience; In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A foc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44cdbd3a51ecb8411b7e6218131982fb
https://hal.science/hal-03796793
https://hal.science/hal-03796793
Publikováno v:
ChemistrySelect. 4:5033-5043
Publikováno v:
Nano Energy. 54:409-428
In order to establish an energy system based on intermittent renewable energies it is of the highest importance to develop efficient and commercially viable technologies. In this regard, metal oxides are particularly promising materials to be used in
Autor:
Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Enrica E. Mura, Roger Nagle, Anya Curran, Eleonora Secco, Farzan Gity, Kevin Thomas, Agnieszka Gocalinska, Andrea Pescaglini, Colm O'Dwyer, Paul K. Hurley
Publikováno v:
Crystals
Volume 11
Issue 2
Crystals, Vol 11, Iss 160, p 160 (2021)
Volume 11
Issue 2
Crystals, Vol 11, Iss 160, p 160 (2021)
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the fi