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pro vyhledávání: '"Ian L. Spain"'
Autor:
Ian L. Spain
Publikováno v:
Chemistry and Physics of Carbon ISBN: 9781003209065
Chemistry and Physics of Carbon
Chemistry and Physics of Carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71607d722b19c451ba5d2ba270b2d941
https://doi.org/10.1201/9781003209065-2
https://doi.org/10.1201/9781003209065-2
Autor:
Ian L. Spain, Pedro Bolsaitis
The description of phase changes and the influence of pressure are important technologically. This chapter considers the field of phase transformations. The subject of solid-solid transformations is a very complex one both from the thermodynamic and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5d435618e51e24ba891f0f198ca462
https://doi.org/10.1201/9780203751985-4
https://doi.org/10.1201/9780203751985-4
Autor:
Mildred S. Dresselhaus, Gene Dresselhaus, Ko Sugihara, Ian L. Spain, Harris A. Goldberg, Manuel Cardona
This book was begun after three of the present authors gave a series of in vited talks on the subject of the structure and properties of carbon filaments. This was at a conference on the subject of optical obscuration, for which submicrometer diame
Publikováno v:
Applied optics. 26(21)
The reflectivities of modified carbon, silicon, and quartz surfaces have been measured from 1 to 25-microm wavelengths. Surfaces were modified by either bombarding carbon surfaces with ~1000-eV Ar(+) ions or growing carbon filaments on them by cataly
Publikováno v:
Journal of Applied Physics. 72:1901-1905
Low‐frequency (10–60 Hz) electrical noise has been measured for the first time in carbon fibers while they were subjected to tensile stress. The measurements were performed at room temperature. In all the fibers, a minimum in the noise was observ
Publikováno v:
Solid State Communications. 75:693-696
A blue-shift of photoluminescence peak energy with laser excitation power is observed in the lattice-matched GaAs/InGaP heterostructure at pressures high enough that the InGaP bandgaps are indirect. The transition energy from the InGaP X-conduction b
Publikováno v:
Applied Physics Letters. 58:744-746
Low‐temperature photoluminescence spectra of an In0.48Ga0.52P alloy and a p‐type GaAs/In0.48Ga0.52P multiple quantum well, both grown by molecular beam epitaxy, have been obtained under hydrostatic pressures from 0 to 6 GPa. The zero‐pressure e
Autor:
Ian L. Spain, Russell Young
Publikováno v:
Physics Today. 44:88-88