Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ian E. Campbell"'
Publikováno v:
The Journal of Physical Chemistry C. 126:16357-16368
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cbbc29fc039ce1b80ba379f774edc67
https://doi.org/10.1021/acs.jpcc.2c04117
https://doi.org/10.1021/acs.jpcc.2c04117
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:7598-7605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f0190382eece6a2b33fea734f97e570
https://doi.org/10.1007/s10854-022-07907-5
https://doi.org/10.1007/s10854-022-07907-5
Publikováno v:
Applied Physics Letters. 119:102102
Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote plasma N2/H2 plasma, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2f8a5cb8625b074a51851e55782931
https://doi.org/10.1063/5.0062140
https://doi.org/10.1063/5.0062140
Autor:
Ian E. Campbell, Suzanne E. Mohney, Alex Molina, Asad J. Mughal, Michael W. Thomas, Timothy N. Walter, Steven P. Dail
Publikováno v:
ECS Meeting Abstracts. :1072-1072
Although silicon (Si) currently dominates the semiconductor industry, its small 1.1 eV band gap limits its maximum operating temperature, which restricts its use in high-temperature, high-power devices. Gallium nitride (GaN) is an attractive semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa6abb77b88b902658f10128c75fa915
https://doi.org/10.1149/ma2021-01331072mtgabs
https://doi.org/10.1149/ma2021-01331072mtgabs
Publikováno v:
Journal of Materials Science: Materials in Electronics; Apr2022, Vol. 33 Issue 10, p7598-7605, 8p
Publikováno v:
Applied Physics Letters; 9/28/2021, Vol. 119 Issue 10, p1-6, 6p
Autor:
Achstetter, Ulrike
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