Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Ian D. French"'
Publikováno v:
SID Symposium Digest of Technical Papers. 38:1599-1602
A new method of making ultra-thin flexible organic light emitting diodes (OLEDs) using standard OLED fabrication facilities is reported. Through use of the Electronics on Plastic by Laser Release (EPLaR) technology, we have developed and demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56512727e4fa4a0297018b6ae003ed94
https://doi.org/10.1889/1.2785625
https://doi.org/10.1889/1.2785625
Publikováno v:
SID Symposium Digest of Technical Papers. 38:1680-1683
Flexible displays have significant advantages for handheld devices by being thin, light, robust and capable of being fitted to curved shapes. We have developed the EPLaR process for making flexible displays in standard AM-LCD factories. In this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9215195ee17d2e04aa009f94fc62bdd
https://doi.org/10.1889/1.2785647
https://doi.org/10.1889/1.2785647
Autor:
Regis Vanderhaghen, M. Elyaakoubi, Yvan Bonnassieux, Ian D. French, P. Roca i Cabarrocas, S. Kasouit
Publikováno v:
Journal of Non-Crystalline Solids. :369-373
Mobility and stability in bottom-gate microcrystalline silicon TFTs with the active layer deposited at 200 °C by PECVD from SiF4/Ar/H2 mixtures have been studied. For fixed deposition conditions, the plasma treatment of the silicon nitride appears t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2d217080b5d82c9d653d1a36971a50
https://doi.org/10.1016/j.jnoncrysol.2004.02.076
https://doi.org/10.1016/j.jnoncrysol.2004.02.076
Autor:
M. Elyaakoubi, J. G. Rocha, Y. Bonassieux, P. Roca i Cabarrocas, S. Kasouit, Ian D. French, Regis Vanderhaghen, B. Vitoux
Publikováno v:
Thin Solid Films. 427:67-70
We study the growth of microcrystalline silicon films on silicon nitride as a function of the deposition conditions and the dielectric plasma treatment.For thin film transistors processed in the bottom gate configuration, we obtain stable transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45386e0d457a1b5083ab369f61b6fd03
https://doi.org/10.1016/s0040-6090(02)01247-6
https://doi.org/10.1016/s0040-6090(02)01247-6
Publikováno v:
Journal of Non-Crystalline Solids. :113-117
Structural and electrical properties of microcrystalline silicon (μc-Si:H) films grown at 200 °C from SiF4 precursor have been studied. A particular growth mechanism in which the material is completely crystallised from the initial stages of deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98b1344c20dba7343cc6b5c8b5cfaae
https://doi.org/10.1016/s0022-3093(01)01187-5
https://doi.org/10.1016/s0022-3093(01)01187-5
Publikováno v:
Thin Solid Films. 383:117-121
We compared threshold voltage shifts in amorphous Si, microcrystalline Si and polycrystalline Si thin-film transistors (TFTs) in terms of a recently developed thermalization energy concept for a dangling-bond defect state creation in amorphous Si TFT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0aa371ad2619fc360082b9e2a2ffa14
https://doi.org/10.1016/s0040-6090(00)01581-9
https://doi.org/10.1016/s0040-6090(00)01581-9
Publikováno v:
Journal of Non-Crystalline Solids. :459-463
We present an improved description of the defect creation kinetics in amorphous silicon thin film transistors and analyze in detail the dependence on the key amorphous silicon material properties: Urbach energy, hydrogen content, hydrogen bonding and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::237b2baee5c174612bf03fe6ae99f1a6
https://doi.org/10.1016/s0022-3093(99)00777-2
https://doi.org/10.1016/s0022-3093(99)00777-2
Publikováno v:
Journal of Applied Physics. 82:1711-1715
Current transport and instability mechanisms in thin film diodes with nonstoichiometric silicon nitride (a-SiNx:H) semiconducting layers have been investigated. In common with amorphous silicon thin film transistors the electrical characteristics of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4781af0d53c4e460a4baecc1b45014ab
https://doi.org/10.1063/1.365971
https://doi.org/10.1063/1.365971
Publikováno v:
Thin Solid Films. 296:94-97
The time resolved microwave conductivity (TRMC) technique measures the transient change in microwave reflectivity that carriers generated by a laser pulse induce in a sample. The reflectivity variation with time reflects, combined with the mobility,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c34679159148bbed84d8799e2378282
https://doi.org/10.1016/s0040-6090(96)09377-7
https://doi.org/10.1016/s0040-6090(96)09377-7
Publikováno v:
Journal of Non-Crystalline Solids. :1058-1062
The first hydrogen dilution study of ammonia/silane plasmas tuned to an aminosilane plasma regime is reported. The use of formal statistical experimental design techniques have enabled us to determine the effects that hydrogen dilution level, rf powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0457475c230b777c1fdda460a1c9324a
https://doi.org/10.1016/0022-3093(96)00041-5
https://doi.org/10.1016/0022-3093(96)00041-5