Zobrazeno 1 - 7
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pro vyhledávání: '"Ian, K. W."'
Autor:
Kristal W. Y. Chan, Ian K. W. Chan, Michael Chau, Tim M. H. Li, Songnia Lai, Wai-ki Sung, Ada Wong, Debbie Chu, Minhong Wang
Publikováno v:
Decision Support Systems. 56:115-121
Advances in network infrastructure and computing technology have made 3D virtual environment increasingly popular and less costly. Many education institutions have shown interests in its application in teaching and learning activities. In this projec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c2e5dce12062c6af603d806e1bdd70
https://doi.org/10.1016/j.dss.2013.05.009
https://doi.org/10.1016/j.dss.2013.05.009
Autor:
Ian, K W, Missous, M, Adzhar Md Zawawiand, M, Ka Wa Ian, Mohamad Adzhar Md Zawawiand and Mohamed Missous
Publikováno v:
Ian, K W, Missous, M & Adzhar Md Zawawiand, M 2014, ' Thermally stable In0.7Ga0.3As/In 0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization ', Semiconductor Science and Technology, vol. 29, no. 3, 035009 . https://doi.org/10.1088/0268-1242/29/3/035009
This work described the fabrication and performances of strained channel In0.52Al0.47As/In0.7Ga0.3As/InP pHEMTs with thermally evaporated Pd/Ti/Au gate metallization. The electrical characteristics of these Pd-gate devices are studied to investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e4b0278d74f7c8de9c9b32f1b9242c4
Autor:
Saguatti, Davide, Mohamad Isa, M., Ian, K. W., Chini, Alessandro, Giovanni Verzellesi, FAUSTO FANTINI, Missous, M.
Publikováno v:
Scopus-Elsevier
Università degli studi di Modena e Reggio Emilia-IRIS
Università degli studi di Modena e Reggio Emilia-IRIS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::03fc0116d39ca3673a8232875aa9ff9a
https://hdl.handle.net/11380/708908
https://hdl.handle.net/11380/708908
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Physics D: Applied Physics; 2013, Vol. 46 Issue 26, p1-7, 7p
Publikováno v:
Scopus-Elsevier
Jubadi, W M, Ian, K W, Missous, M & Zainal, N 2017, ' An X-band MMIC low noise amplifier design with In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As pHEMT ', Journal of Telecommunication, Electronic and Computer Engineering, vol. 9, no. 3-8, pp. 101-106 . < https://journal.utem.edu.my/index.php/jtec/article/view/3106 >
Jubadi, W M, Ian, K W, Missous, M & Zainal, N 2017, ' An X-band MMIC low noise amplifier design with In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As pHEMT ', Journal of Telecommunication, Electronic and Computer Engineering, vol. 9, no. 3-8, pp. 101-106 . < https://journal.utem.edu.my/index.php/jtec/article/view/3106 >
A low noise amplifier (LNA) design operating at X-band frequency range of 8 – 12 GHz using 0.25 µm In0.7Ga0.3As/In0.52Al0.48As pHEMT is presented. The target specifications of the MMIC LNA design are then addressed, the performance constraints and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c1638054492c7eb0420039adf319dd07
http://www.scopus.com/inward/record.url?eid=2-s2.0-85041846054&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85041846054&partnerID=MN8TOARS