Zobrazeno 1 - 10
of 156
pro vyhledávání: '"Iain G. Thayne"'
Autor:
Rachel A. Oliver, Oliver A. Williams, James W Pomeroy, Daniel E. Field, Matthew D. Smith, Jerome A. Cuenca, Iain G. Thayne, Martin Kuball, Fabien Massabuau, Simon M. Fairclough
Publikováno v:
ACS Applied Materials & Interfaces. 12:54138-54145
Integrating diamond with GaN high electron mobility transistors (HEMTs) improves thermal management, ultimately increasing the reliability and performance of high-power high-frequency radio frequency amplifiers. Conventionally, an amorphous interlaye
Autor:
Crispin Hetherington, Anna Fontcuberta i Morral, Iain G. Thayne, Matthew J. Steer, Heera Menon, Robin Athle, Mattias Borg, Nicholas Morgan
InSb has the smallest bandgap and highest electron mobility among III‐V semiconductors and is widely used for photodetectors and high‐frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e2244666fda77cc89d2f36eaefd1444
https://eprints.gla.ac.uk/258450/1/258450.pdf
https://eprints.gla.ac.uk/258450/1/258450.pdf
Autor:
Francisco Ramirez, Mark Portnoi, Iain G. Thayne, Martyna Michalska, Junho Oh, Sophia K. Laney, Manish K. Tiwari, Ioannis Papakonstantinou, Tao Li, Ivan P. Parkin
Publikováno v:
ACS Nano
Periodic nanotube arrays render enhanced functional properties through their interaction with light and matter, but to reach optimal performance for technologically prominent applications, such as wettability or photonics, structural fine-tuning is e
Autor:
Partha Pratim Das, Paul R. Chalker, Vinod R. Dhanak, Richard J. Potter, Teresa Partida Manzanera, Sung-Jin Cho, Rajat Mahapatra, Iain G. Thayne, James T. Gibbon, Leanne A. H. Jones, Ivona Z. Mitrovic, J.W. Roberts
Publikováno v:
ECS Transactions
GaN high electron mobility transistors (HEMTs) have been commercially available for over 10 years, however gate leakage limits their performance. The HEMT has the advantages of offering simple associated circuit design and fail-safe operation. Curren
Autor:
David J. Wallis, Rachel A. Oliver, Oliver A. Williams, Daniel E. Field, Soumen Mandal, James W Pomeroy, Martin Kuball, Matthew D. Smith, Fabien Massabuau, Iain G. Thayne, Jerome A. Cuenca
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::296081e9841f22c8fa37d2cdd863ce2f
https://orca.cardiff.ac.uk/id/eprint/136722/8/1-s2.0-S0008622320311465-main.pdf
https://orca.cardiff.ac.uk/id/eprint/136722/8/1-s2.0-S0008622320311465-main.pdf
Autor:
Lasse Södergren, Heera Menon, Matthew J. Steer, Robin Athle, Iain G. Thayne, Jonas Johansson, Mattias Borg
Monolithic integration of III–V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8353b8ef7316711542abf6f87cf873ea
https://eprints.gla.ac.uk/233114/2/233114.pdf
https://eprints.gla.ac.uk/233114/2/233114.pdf
Autor:
Partha Pratim Das, Vinod R. Dhanak, Leanne A. H. Jones, J.W. Roberts, Richard J. Potter, Rajat Mahapatra, Teresa Partida-Manzanera, James T. Gibbon, Paul R. Chalker, Sung-Jin Cho, Iain G. Thayne, Ivona Z. Mitrovic
Publikováno v:
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
A comprehensive study of the band alignments of TixAl1−xOy (with x = 9%, 16%, 25%, 36%, 100%) and GaxAl1−xOy (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition on GaN has been presented using X-ray photoelectron spectroscopy and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c28c5fd07a5d341a6c8a74d480215c0
https://eprints.gla.ac.uk/221312/1/221312.pdf
https://eprints.gla.ac.uk/221312/1/221312.pdf
Autor:
Fang Bo, Changzhi Gu, S. S. Sun, Shiyao Wu, Zhanchun Zuo, Iain G. Thayne, Yang Yu, Kai Peng, Xiulai Xu, Kuijuan Jin, Bei-Bei Li, Shushu Shi, Jingnan Yang, Matthew J. Steer, Jianchen Dang, Feilong Song, Jiongji He, Chenjiang Qian, Xin Xie, Yun-Feng Xiao
Publikováno v:
Light, Science & Applications
Light: Science & Applications, Vol 9, Iss 1, Pp 1-8 (2020)
Light: Science & Applications, Vol 9, Iss 1, Pp 1-8 (2020)
In single microdisks, embedded active emitters intrinsically affect the cavity modes of the microdisks, resulting in trivial symmetric backscattering and low controllability. Here we demonstrate macroscopic control of the backscattering direction by
Autor:
Iain G. Thayne, Matthew J. Steer, Xu Li, David Millar, Paul K. Hurley, Yen-Chun Fu, Uthayasankaran Peralagu
The results of an investigation into the impact of in situ H2 plasma exposure on the electrical properties of the p/n-In0.3 Ga0.7 Sb-Al2O3 interface are presented. Samples were processed using a clustered inductively coupled plasma reactive ion etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4d60383f3c92d0448717cb48482b9ca
https://hdl.handle.net/10468/9443
https://hdl.handle.net/10468/9443
Autor:
Robert H. Hadfield, Simon Doyle, T. L. R. Brien, Archan Banerjee, Ken Wood, Iain G. Thayne, Dilini Hemakumara, Dmitry Morozov
Publikováno v:
Journal of Low Temperature Physics
We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 1