Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Iain F. Crowe"'
Autor:
Tarek O. Abdul Fattah, Janet Jacobs, Vladimir P. Markevich, Nikolay V. Abrosimov, Matthew P. Halsall, Iain F. Crowe, Anthony R. Peaker
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 8, Iss 4, Pp 100629- (2023)
Before lower purity, lower cost silicon (Si) materials, such as compensated Si, can play a role in the terawatt-level (TW) capacity of photovoltaics, a better understanding of the fundamental properties of impurities in compensated Si is essential. I
Externí odkaz:
https://doaj.org/article/d11487d7d8834392bbe982a949f4bfba
Publikováno v:
Symmetry, Vol 16, Iss 4, p 430 (2024)
We develop a 4 × 4-matrix model based on temporal coupled mode theory (TCMT) to elucidate the intricate energy exchange within a non-Hermitian, resonant photonic structure, based on the recently described infinity-loop micro-resonator (ILMR). We con
Externí odkaz:
https://doaj.org/article/852fb64c34a44a89b341f952131619fc
Autor:
Siham M. Hussein, Iain F. Crowe, Nick Clark, Milan Milosevic, Aravind Vijayaraghavan, Frederic Y. Gardes, Goran Z. Mashanovich, Matthew P. Halsall
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-8 (2017)
Abstract We present a Raman mapping study of monolayer graphene G and 2D bands, after integration on silicon strip-waveguide-based micro-ring resonators (MRRs) to characterize the effects of the graphene transfer processes on its structural and optoe
Externí odkaz:
https://doaj.org/article/8ec321cd77e740e684d421901086e139
Autor:
Mariko Murayama, Yuri Tamamoto, Yingda Qian, Asuka Ishizawa, Simon Hammersley, Iain F. Crowe, Shuji Komuro, Xinwei Zhao
Publikováno v:
Optics and Photonics Journal. 12:215-224
Autor:
Ankit Poudel, Pravin Bhattarai, Rijan Maharjan, Maddison Coke, Richard J Curry, Iain F Crowe, Ashim Dhakal
Publikováno v:
Poudel, A, Bhattarai, P, Maharjan, R, Coke, M, Curry, R, Crowe, I & Dhakal, A 2023, ' Spectrometer based on a compact disordered multi-mode interferometer ', Optics Express, vol. 31, no. 8, pp. 12624-12633 . https://doi.org/10.1364/OE.484199
We present a compact, CMOS compatible, photonic integrated circuit (PIC) based spectrometer that combines a dispersive array element of SiO2-filled scattering holes within a multimode interferometer (MMI) fabricated on the silicon-on-insulator (SOI)
Autor:
Vladimir P. Markevich, Matthew P. Halsall, Lijie Sun, Iain F. Crowe, Anthony R. Peaker, Piotr Kruszewski, Jerzy Plesiewicz, Pawel Prystawko, Sylwester Bulka, Rafal Jakiela
Publikováno v:
Markevich, V P, Halsall, M P, Sun, L, Crowe, I F, Peaker, A R, Kruszewski, P, Plesiewicz, J, Prystawko, P, Bulka, S & Jakiela, R 2022, ' Electric-Field Enhancement of Electron Emission Rates for Deep-Level Traps in n-type GaN ', Physica Status Solidi (B) Basic Research . https://doi.org/10.1002/pssb.202200545
Results of a deep-level transient spectroscopy (DLTS) study of trapping states in Ni/Au Schottky diodes made on Si-doped GaN layers grown by metal–organic vapor-phase epitaxy (MOVPE) on highly conductive n-type Ammono-GaN substrates are reported. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::233c172e59f25028bf509e91a177e4b4
https://research.manchester.ac.uk/en/publications/b5247e2e-6bbe-4b18-a1ce-a0754cbe5187
https://research.manchester.ac.uk/en/publications/b5247e2e-6bbe-4b18-a1ce-a0754cbe5187
Autor:
Anthony R. Peaker, Hussein M. Ayedh, Robert J. Falster, Jeff Binns, Matthew P. Halsall, Vladimir P. Markevich, Nikolay V. Abrosimov, Iain F. Crowe, José Coutinho, I. D. Hawkins, Joyce Ann T. De Guzman
Publikováno v:
De Guzman, J A T, Markevich, V P, Hawkins, I D, Ayedh, H M, Coutinho, J, Binns, J, Falster, R, Abrosimov, N V, Crowe, I F, Halsall, M P & Peaker, A R 2021, ' Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps ', Physica Status Solidi (A) Applications and Materials Science . https://doi.org/10.1002/pssa.202100108
Funding Information: The authors would like to thank EPSRC (UK) for funding this work via grant EP/TO25131/1. J.A.T.D.G. would like to thank the Government of the Philippines through the Department of Science and Technology (DOST) for her Ph.D. fundi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::223b4624d5d9e43f5a2be07efde147c4
https://aaltodoc.aalto.fi/handle/123456789/109032
https://aaltodoc.aalto.fi/handle/123456789/109032
Publikováno v:
Crowe, I 2019, ' Influence of Al on the local structure of Nd-doped TiO 2 thin films: A combined luminescence and X-ray absorption fine structure analysis ', Materials Science and Engineering B: Advanced Functional Solid-state Materials, vol. 246, pp. 49-52 . https://doi.org/10.1016/j.mseb.2019.05.010
Rare-earth related optical emission in oxide semiconductors is strongly influenced by the local co-ordination around the rare-earth centres. In this contribution, we examine the effect of aluminium co-doping on the local fine structure of neodymium-d
Autor:
Richard A. Hogg, Richard J. Curry, David T. D. Childs, Iain F. Crowe, Sanket Bohora, Ashim Dhakal, Rijan Maharjan, Pravin Bhattarai
Publikováno v:
Maharjan, R, Bohora, S, Bhattarai, P, Crowe, I, Curry, R J, Hogg, R, Childs, D & Dhakal, A 2021, ' Non-diffracting beam generated from a photonic integrated circuit based axicon-like lens ', Optics Express, vol. 29, no. 7, pp. 10480-10490 . https://doi.org/10.1364/OE.419618
We demonstrate an on-chip silicon-on-insulator (SOI) device to generate a non-diffracting beam of ≈850 µm length from a diffractive axicon-like lens etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46e61a4055ddc61007f05b9c5cf983b1
https://eprints.gla.ac.uk/276911/1/276911.pdf
https://eprints.gla.ac.uk/276911/1/276911.pdf
Autor:
Tarek O. Abdul Fattah, Vladimir P. Markevich, Joyce Ann T. De Guzman, José Coutinho, Stanislau B. Lastovskii, Ian D. Hawkins, Iain F. Crowe, Matthew P. Halsall, Anthony R. Peaker
Publikováno v:
physica status solidi (a). 219:2200176