Zobrazeno 1 - 10
of 6 701
pro vyhledávání: '"IVANOV, I."'
Autor:
Ivanov, I. A., Kim, Kyung Taec
We present results of relativistic calculations of even order harmonic generation from various atomic targets. The even order harmonics appear due to the relativistic non-dipole effects. We take these relativistic effects into account by using an app
Externí odkaz:
http://arxiv.org/abs/2310.12473
We study formation and evolution of the electron wave-packets in the process of strong field ionization of various atomic targets. Our study is based on reformulating the problem in terms of conditional amplitudes, i.e., the amplitudes describing out
Externí odkaz:
http://arxiv.org/abs/2310.10937
Autor:
Ivanov, I. A., Kim, K. T.
We describe an approach to the description of the time-development of the process of strong field ionization of atoms based on the calculation of the joint probability of occurrence of two events, event B being finding atom in the ionized state after
Externí odkaz:
http://arxiv.org/abs/2210.15211
Autor:
Astner, T., Koller, P., Gilardoni, C. M., Hendriks, J., Son, N. T., Ivanov, I. G., Hassan, J. U., van der Wal, C. H., Trupke, M.
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin rela
Externí odkaz:
http://arxiv.org/abs/2206.06240
Autor:
Brumm, S., Gabrielli, F., Sanchez Espinoza, V., Stakhanova, A., Groudev, P., Petrova, P., Vryashkova, P., Ou, P., Zhang, W., Malkhasyan, A., Herranz, L.E., Iglesias Ferrer, R., Angelucci, M., Berdaï, M., Mascari, F., Agnello, G., Sevbo, O., Iskra, A., Martinez Quiroga, V., Nudi, M., Hoefer, A., Pauli, E.-M., Beck, S., Tiborcz, L., Coindreau, O., Clark, G., Lamont, I., Zheng, X., Kubo, K., Lee, B., Valincius, M., Malicki, M., Lind, T., Vorobyov, Y., Kotsuba, O., Di Giuli, M., Ivanov, I., D’Onorio, M., Giannetti, F., Sevon, T.
Publikováno v:
In Annals of Nuclear Energy February 2025 211
Autor:
Tabakova, T., Nikolova, D., Ivanov, I., Anghel, E.M., Karashanova, D., Karakirova, Y., Venezia, A.M., Vakros, J., Crişan, M., Tenchev, K., Gabrovska, M.
Publikováno v:
In International Journal of Hydrogen Energy 12 June 2024 70:389-403
Divacancy in its neutral charge state (V$_\text{C}$V$_\text{Si}^0$) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC four different V$_\text{C}$V$_\text{Si}$ configurations can be formed
Externí odkaz:
http://arxiv.org/abs/2107.01971
We study propagation effects due to the finite speed of light in ionization of extended systems. We present a general quantitative theory of these effects and show under which conditions such effects should appear. The finite speed of light propagati
Externí odkaz:
http://arxiv.org/abs/2106.14382
Autor:
Trifonova, I., Korsun, N., Madzharova, I., Velikov, P., Alexsiev, I., Grigorova, L., Voleva, S., Yordanova, R., Ivanov, I., Tcherveniakova, T., Christova, I.
Publikováno v:
In Heliyon 15 April 2024 10(7)