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Akademický článek

Ivanov I. A. (on to the 60th Anniversary)

Autor: article editoral

Publikováno v: Litʹë i Metallurgiâ, Vol 0, Iss 3, Pp 22-23 (2021)

Externí odkaz: https://doaj.org/article/ed1c8535614d4c0d9ebd6b1b11033c65

Akademický článek

Trade and Economic Cooperation of Russia and Uzbekistan at the Current Stage Ivanov I. P. The Development of Trade Platforms ETF in Europe

Autor: I. D. Goryunov

Publikováno v: Вестник Российского экономического университета имени Г. В. Плеханова, Vol 0, Iss 4, Pp 197-204 (2018)

The article shows the place and role of Uzbekistan in foreign economic relations of the Russian Federation and analyzes the contract-legal foundation regulating trade and economic cooperation between the states. Special attention is paid to the struc

Externí odkaz: https://doaj.org/article/38c9dc057c594da5ab6962ff3ff23157

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Relativistic calculation of non-dipole effects in high harmonic generation

Autor: Ivanov, I. A., Kim, Kyung Taec

We present results of relativistic calculations of even order harmonic generation from various atomic targets. The even order harmonics appear due to the relativistic non-dipole effects. We take these relativistic effects into account by using an app

Externí odkaz: http://arxiv.org/abs/2310.12473

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Tracking quantum clouds expansion in tunneling ionization

Autor: Ivanov, I. A., Kheifets, A. S., Kim, Kyung Taec

We study formation and evolution of the electron wave-packets in the process of strong field ionization of various atomic targets. Our study is based on reformulating the problem in terms of conditional amplitudes, i.e., the amplitudes describing out

Externí odkaz: http://arxiv.org/abs/2310.10937

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Joint probability calculation of the lateral velocity distribution in strong field ionization process

Autor: Ivanov, I. A., Kim, K. T.

We describe an approach to the description of the time-development of the process of strong field ionization of atoms based on the calculation of the joint probability of occurrence of two events, event B being finding atom in the ionized state after

Externí odkaz: http://arxiv.org/abs/2210.15211

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Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

Autor: Astner, T., Koller, P., Gilardoni, C. M., Hendriks, J., Son, N. T., Ivanov, I. G., Hassan, J. U., van der Wal, C. H., Trupke, M.

Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin rela

Externí odkaz: http://arxiv.org/abs/2206.06240

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