Zobrazeno 1 - 10
of 7 056
pro vyhledávání: '"IRRADIATED SILICON"'
Autor:
Abdedou, Y., Fuchs, A., Fuchs, P., Herrmann, D., Weber, S., Schäfer, M., L'huillier, J., Becher, C., Neu, E.
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers), it is an excellent material for optical r
Externí odkaz:
http://arxiv.org/abs/2404.09906
Akademický článek
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Autor:
Pape, Sebastian1,2 (AUTHOR) marcos.fernandez@cern.ch, Fernández García, Marcos1,3 (AUTHOR) michael.moll@cern.ch, Moll, Michael1 (AUTHOR) m.wiehe@cern.ch, Wiehe, Moritz1 (AUTHOR)
Publikováno v:
Sensors (14248220). Aug2024, Vol. 24 Issue 16, p5443. 17p.
Autor:
Yarykin, Nikolai1 (AUTHOR) NAY@iptm.ru, Weber, Jörg2 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 9/28/2024, Vol. 136 Issue 12, p1-7. 7p.
Autor:
Xu, Fei, Kane, Joshua J., Xu, Peng, Schulthess, Jason L., Gonderman, Sean, Cordesa, Nikolaus L.
Silicon Carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuels. To enable an improved understanding of SiC-SiC composite performance, the development of non-destru
Externí odkaz:
http://arxiv.org/abs/2303.02886
Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have been determin
Externí odkaz:
http://arxiv.org/abs/2212.07320
Publikováno v:
In Physica B: Condensed Matter 15 July 2024 685
Autor:
Cao, Shuang, Yu, Qingkui, Wang, Qianyuan, Wang, He, Sun, Yi, Lv, He, Mei, Bo, Mo, Rigen, Li, Pengwei, Zhang, Hongwei
Publikováno v:
In Microelectronics Reliability June 2024 157
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the measured d
Externí odkaz:
http://arxiv.org/abs/2301.09371
Background: Edge-on-irradiated silicon detectors are currently being investigated for use in photon-counting CT applications. The low atomic number of silicon leads to a significant number of incident photons being Compton scattered in the detector,
Externí odkaz:
http://arxiv.org/abs/2206.04164