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Publikováno v:
Microelectronics reliability, 38(38), 277-280. Elsevier
Deposited instead of thermally grown oxides were studied to form high-quality interpolysilicon dielectric layers for embedded non-volatile memory application. It was found that by optimizing the texture and morphology of the polysilicon layers and by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68598da9ef2bc93104909486325afe40
https://doi.org/10.1016/s0026-2714(97)00047-4
https://doi.org/10.1016/s0026-2714(97)00047-4
