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Publikováno v:
7th International symposium of Plasma Process-Induced Damage, 134-137
STARTPAGE=134;ENDPAGE=137;TITLE=7th International symposium of Plasma Process-Induced Damage
STARTPAGE=134;ENDPAGE=137;TITLE=7th International symposium of Plasma Process-Induced Damage
The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the eff