Zobrazeno 1 - 10
of 964
pro vyhledávání: '"INTRINSIC DEFECTS"'
Autor:
Jiang, Yicheng a, Pang, Jinshuo a, Zhang, Xiang a, Zhao, Dongdong a, Zhao, Naiqin a, He, Chunnian a, b, c, Liu, Enzuo a, ⁎
Publikováno v:
In Diamond & Related Materials January 2025 151
Autor:
Jiarun Chen, Mingjie Wang, Liuhua Chen, Kun Guo, Boya Liu, Kai Wang, Ning Li, Lipiao Bao, Xing Lu
Publikováno v:
Advanced Energy & Sustainability Research, Vol 5, Iss 8, Pp n/a-n/a (2024)
Molecular iron phthalocyanine (FePc) bearing a single‐atom Fe–N4 moiety is a high‐profile non‐platinum catalyst toward the oxygen reduction reaction (ORR), but its unsatisfactory activity and inadequate stability hinder the practical applicat
Externí odkaz:
https://doaj.org/article/cced33b17e5c4afebb1ed32e96c8ccf3
Publikováno v:
Nano Select, Vol 4, Iss 5, Pp 316-323 (2023)
Abstract Supercapacitors have been used in a broad range of fields including electronics, transportation, and energies. Electrode materials with high capacitance and good rate performance are crucial for the future development and application of supe
Externí odkaz:
https://doaj.org/article/8862b5e1d62e49ed88580dce1c54989a
Autor:
Stavros-Richard G. Christopoulos, Efstratia N. Sgourou, Alexander Chroneos, Charalampos A. Londos
Publikováno v:
Applied Sciences, Vol 14, Iss 10, p 4194 (2024)
Carbon (C) is an important isovalent impurity in silicon (Si) that is inadvertently added in the lattice during growth. Germanium (Ge), tin (Sn), and lead (Pb) are isovalent atoms that are added in Si to improve its radiation hardness, which is impor
Externí odkaz:
https://doaj.org/article/23c69f467c56464bb7325f47f6a5d7ad
Publikováno v:
Advanced Science, Vol 11, Iss 4, Pp n/a-n/a (2024)
Abstract Two‐dimensional (2D) materials as tungsten disulphide (WS2) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric‐transport and optical properties. However, the presence of defects in
Externí odkaz:
https://doaj.org/article/01e7ba9e92c04c8eaf39e37ed9f26f50
Autor:
Yuping Liu, Zhirong Liu, Haixian Yu, Junyi Huang, Xiongjie Li, Xiaoting Ma, Yan Shen, Guoli Tu, Mingkui Wang
Publikováno v:
Chemistry of Inorganic Materials, Vol 1, Iss , Pp 100023- (2023)
Photodetector is an essential component in many optoelectronic devices nowadays that converts the incoming optical signal into an electrical signal. The need for multi-spectral photoelectric detection in the same scene promotes the application of wid
Externí odkaz:
https://doaj.org/article/d19e1140d2ef4e339cca4a29f794d0fe
Publikováno v:
Applied Sciences, Vol 14, Iss 4, p 1631 (2024)
Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth an
Externí odkaz:
https://doaj.org/article/121205dbffb94c059bd0112b5ca688a0
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Autor:
Menghua Yang, Jiangchao Liu, Hang Xu, Yongfeng Pei, Changzhong Jiang, Dong He, Xiangheng Xiao
Publikováno v:
ChemPhysMater, Vol 1, Iss 3, Pp 155-182 (2022)
With the depletion of fossil fuels and environmental pollution, energy storage and conversion have become the focus of current research. Water splitting and fuel cell technologies have made outstanding contributions to energy conversion. However, the
Externí odkaz:
https://doaj.org/article/f94a773723e3471bb74b617ea92abbbc