Zobrazeno 1 - 10
of 2 157
pro vyhledávání: '"IMAMURA, Hiroshi"'
Publikováno v:
Physical Review Applied 22, 014032 (2024)
Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, and bio-medical sensing. To improve the detection capability of TMR sen
Externí odkaz:
http://arxiv.org/abs/2406.18811
Autor:
Yamaji, Toshiki, Imamura, Hiroshi
Publikováno v:
Journal of the Physical Society of Japan (JPSJ), 92, 064703 (2023)
High-speed magnetization switching of a nanomagnet is necessary for faster information processing. The ballistic switching by a pulsed magnetic filed is a promising candidate for the high-speed switching. It is known that the switching speed of the b
Externí odkaz:
http://arxiv.org/abs/2305.10111
Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volatile memory with ultralow power consumption. However, the dynamic switch
Externí odkaz:
http://arxiv.org/abs/2305.09883
Autor:
Arai, Hiroko, Imamura, Hiroshi
Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory cell decre
Externí odkaz:
http://arxiv.org/abs/2303.05706
Autor:
Kitaoka, Yukie, Imamura, Hiroshi
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by inserting an ul
Externí odkaz:
http://arxiv.org/abs/2303.04382
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power consumpti
Externí odkaz:
http://arxiv.org/abs/2211.07148
Publikováno v:
Journal of Magnetism and Magnetic Materials 563 (2022) 170012
Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy constant is theoretically studied. Assuming that WER is much smaller tha
Externí odkaz:
http://arxiv.org/abs/2209.13828
Publikováno v:
Journal of Magnetism and Magnetic Materials 553 (2022) 169209
Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the correlation time of the bath degrees of freedom. In the equations of mo
Externí odkaz:
http://arxiv.org/abs/2205.06399
Autor:
Ichida, Hirofumi, Imamura, Hiroshi, Takahashi, Atsushi, Yoshioka, Ryuji, Mise, Yoshihiro, Inoue, Yosuke, Takahashi, Yu, Saiura, Akio
Publikováno v:
In Surgery October 2024 176(4):1189-1197
Autor:
Fujitani, Kazumasa, Kurokawa, Yukinori, Wada, Ryohei, Takeno, Atsushi, Kawabata, Ryohei, Omori, Takeshi, Imamura, Hiroshi, Hirao, Motohiro, Endo, Shunji, Kawada, Junji, Moon, Jeong Ho, Takiguchi, Shuji, Mori, Masaki, Eguchi, Hidetoshi, Doki, Yuichiro
Publikováno v:
In European Journal of Cancer December 2024 213