Zobrazeno 1 - 10
of 21 711
pro vyhledávání: '"III-V"'
Autor:
Felix Mauerhoff, Oktay Senel, Hans Wenzel, André Maaßdorf, Jos Boschker, Johannes Glaab, Katrin Paschke, Günther Tränkle
Publikováno v:
IET Optoelectronics, Vol 18, Iss 5, Pp 140-145 (2024)
Abstract The authors present continuous wave (CW) high‐power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs‐based diode lasers in the AlGaInP system for laser emission at
Externí odkaz:
https://doaj.org/article/af4b5b5307a84cf5bfc34445bd5fa6bb
Research Paper: Topological Phase Transition of InSb and InBi Under Nonhydrostatic Lattice Expansion
Autor:
Saba Ahmadvand, Shirin Namjoo
Publikováno v:
فیزیک کاربردی ایران, Vol 14, Iss 3, Pp 106-121 (2024)
This study investigated the topological phase transition of InSb and InBi under a non-hydrostatic lattice using density functional theory and the WIEN2K code. The results of examining the band structure of InSb and InBi employing the mBJGGA exchange-
Externí odkaz:
https://doaj.org/article/f9897945901b4d30a8274a046ba677d9
Publikováno v:
Quantum Frontiers, Vol 3, Iss 1, Pp 1-15 (2024)
Abstract This review aims to provide a comprehensive overview of the development and current understanding of GaAs and InAs heterostructures, with a special emphasis on achieving high material quality and high-mobility two-dimensional electron gases
Externí odkaz:
https://doaj.org/article/23793b99cde14b9eba45007eb3ff8651
Autor:
Bagavath Chandran, Jeong-Kyun Oh, Sang-Wook Lee, Dae-Young Um, Sung-Un Kim, Vignesh Veeramuthu, Jin-Seo Park, Shuo Han, Cheul-Ro Lee, Yong-Ho Ra
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-34 (2024)
Highlights In-depth review assesses III–V materials for efficient hydrogen generation and CO2 reduction in renewable energy technologies. Exploration of strategies for broad light absorption and increased efficiency in water splitting processes and
Externí odkaz:
https://doaj.org/article/adedcaa339454fc6ac3957664810bc62
Autor:
Enming Zhang, Yue Zeng, Wenyu Kang, Zhibai Zhong, Yushou Wang, Tongwei Yan, Shaohua Huang, Zhongying Zhang, Kechuang Lin, Junyong Kang
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 11, Pp n/a-n/a (2024)
Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates
Externí odkaz:
https://doaj.org/article/a48baf042cbd46ffbbe1125cf80290ba
Publikováno v:
Frontiers in Nanotechnology, Vol 6 (2024)
Nanostructured silicon solar cells are designed to minimize costs through reduced material usage while enhancing power conversion efficiency via superior light trapping and shorter charge separation distances compared to traditional planar cells. Thi
Externí odkaz:
https://doaj.org/article/da7811a97fae4968bbc89c1bb3536f13
Publikováno v:
Serbian Journal of Electrical Engineering, Vol 21, Iss 2, Pp 275-295 (2024)
This paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application. Experimental data from an AlGaN/InGaN/GaN HEMT is used to validate
Externí odkaz:
https://doaj.org/article/a3fe41767f494845992af0e6416946e2
Autor:
Mourad Hebali, Benaoumeur Ibari, Menaouer Bennaoum, Mohammed El Amine Beyour, Mohammed Berka, Hocine Abdelhak Azzeddine, Abdelkader Maachou
Publikováno v:
Journal of Renewable Energy and Environment, Vol 11, Iss 2, Pp 163-167 (2024)
In this research paper, the electrical properties of an ITO/Al0.7Ga0.3As/ITO solar cell were investigated using SILVACO 2D-Atlas. Characterization was performed through static characteristics (I–V) and (P-V)) at room temperature and under standard
Externí odkaz:
https://doaj.org/article/78e6b6e528804f4eb0b5477f61ebb4cc
Autor:
James C. Gallagher, Michael A. Mastro, Alan G. Jacobs, Robert. J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high fr
Externí odkaz:
https://doaj.org/article/b91217baedd446a78ec363aca62a9849
Autor:
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectr
Externí odkaz:
https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56