Zobrazeno 1 - 10
of 361 802
pro vyhledávání: '"III–V"'
Adding a few atomic percent of Bi to III--V semiconductors leads to significant changes in their electronic structure and optical properties. Bismuth substitution on the pnictogen site leads to a large increase in spin-orbit splitting $\Delta_{\rm SO
Externí odkaz:
http://arxiv.org/abs/2411.19257
Autor:
Shah, Manoj Kumar, Soref, Richard A., Zhang, Diandian, Du, Wei, Salamo, Gregory J., Yu, Shui-Qing, Mortazavi, Mansour
Photonic integrated circuits (PICs) have been acknowledged as the promising platforms for the applications in data communication, Lidar in autonomous driving vehicles, innovative sensor technology, etc. Since the demonstration of optical components i
Externí odkaz:
http://arxiv.org/abs/2411.13035
Autor:
Esmaielpour, Hamidreza, Schmiedeke, Paul, Isaev, Nabi, Doganlar, Cem, Döblinger, Markus, Finley, Jonathan J., Koblmüller, Gregor
One-dimensional structures such as nanowires (NWs) show great promise in tailoring the rates of hot carrier thermalization in semiconductors with important implications for the design of efficient hot carrier absorbers. However, fabrication of high-q
Externí odkaz:
http://arxiv.org/abs/2411.07822
Autor:
Pomar, Thierry Désiré, Steegemans, Tristan, Kumar, Sreejith, Bjørk, Rasmus, Lei, Zijin, Cheah, Erik, Schott, Rüdiger, Bøggild, Peter, Pryds, Nini, Wegscheider, Werner, Christensen, Dennis Valbjørn
Magnetometers based on the extraordinary magnetoresistance (EMR) effect are promising for applications which demand high sensitivity combined with room temperature operation but their application for magnetic field sensing requires further optimizati
Externí odkaz:
http://arxiv.org/abs/2410.17713