Zobrazeno 1 - 10
of 7 188
pro vyhledávání: '"III/V semiconductors"'
Publikováno v:
Quantum Frontiers, Vol 3, Iss 1, Pp 1-15 (2024)
Abstract This review aims to provide a comprehensive overview of the development and current understanding of GaAs and InAs heterostructures, with a special emphasis on achieving high material quality and high-mobility two-dimensional electron gases
Externí odkaz:
https://doaj.org/article/23793b99cde14b9eba45007eb3ff8651
Autor:
Bagavath Chandran, Jeong-Kyun Oh, Sang-Wook Lee, Dae-Young Um, Sung-Un Kim, Vignesh Veeramuthu, Jin-Seo Park, Shuo Han, Cheul-Ro Lee, Yong-Ho Ra
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-34 (2024)
Highlights In-depth review assesses III–V materials for efficient hydrogen generation and CO2 reduction in renewable energy technologies. Exploration of strategies for broad light absorption and increased efficiency in water splitting processes and
Externí odkaz:
https://doaj.org/article/adedcaa339454fc6ac3957664810bc62
Autor:
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectr
Externí odkaz:
https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56
Autor:
James C. Gallagher, Michael A. Mastro, Alan G. Jacobs, Robert. J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high fr
Externí odkaz:
https://doaj.org/article/b91217baedd446a78ec363aca62a9849
Autor:
Giparakis Miriam, Windischhofer Andreas, Isceri Stefania, Schrenk Werner, Schwarz Benedikt, Strasser Gottfried, Andrews Aaron Maxwell
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1773-1780 (2024)
InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0, enhancing
Externí odkaz:
https://doaj.org/article/3cdbc79c33e742d08730f751fb524d55
Publikováno v:
Surfaces, Vol 7, Iss 1, Pp 79-87 (2024)
Density-functional theory calculations on P-rich InP(001):H surfaces are presented. Depending on temperature, pressure and substrate doping, hydrogen desorption or adsorption will occur and influence the surface electronic properties. For p-doped sam
Externí odkaz:
https://doaj.org/article/244d209139e6406f914423146efbfbb3
Publikováno v:
Journal of Applied Physics. 2018, Vol. 123 Issue 17, pN.PAG-N.PAG. 5p. 2 Black and White Photographs, 4 Graphs.
Autor:
Carlson, Eric Paul
GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into Ga
Externí odkaz:
http://hdl.handle.net/10919/115781
Publikováno v:
Photonics, Vol 11, Iss 3, p 235 (2024)
Au nanoparticles (NPs) were designed to be embedded into III-V semiconductors to form Au/GaAs Schottky heterostructures, which were used as top-modified cover layers for quantum dot semiconductor saturable absorption mirrors (QD-SESAMs). By harnessin
Externí odkaz:
https://doaj.org/article/6d7bd9658e094cb4a8fbc99ac3b1944e
Publikováno v:
Electronics Letters, Vol 59, Iss 18, Pp n/a-n/a (2023)
Abstract Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance
Externí odkaz:
https://doaj.org/article/b05bec842d5749bf81f204179803a597