Zobrazeno 1 - 10
of 54
pro vyhledávání: '"IBE, Eishi"'
Autor:
Ibe, Eishi, Shimbo, Kenichi, Toba, Tadanobu, Taniguchi, Hitoshi, Uezono, Takumi, Nishii, Koji, Taniguchi, Yoshio
Publikováno v:
宇宙航空研究開発機構特別資料 = JAXA Special Publication. :148-154
As semiconductor device scaling is on-going far below 100nm design rule, terrestrial neutron-induced soft-error typically in CMOS devices is predicted to be worsen furthermore. Moreover, novel failure modes that may be more serious than those in memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::c9155e3d780a4c6a0da09b1722a3c7f7
http://id.nii.ac.jp/1696/00004320/
http://id.nii.ac.jp/1696/00004320/
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, p1-22, 22p
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, p23-32, 10p
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, p33-48, 16p
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, pi-xxiv, 20p
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, p207-248, 42p
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, p49-59, 11p
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, p61-105, 45p
Autor:
Ibe, Eishi H.
Publikováno v:
Terrestrial Radiation Effects in ULSI Devices & Electronic Systems; 2014, p107-155, 49p