Výsledky vyhledávání

RHEED study of CdTe and HgCdTe thin films grown on Si by pulse laser deposition

Autor: I.O. Rudyj, G. Wisz, I.V. Kurilo, I. S. Virt, Marian Kuzma, M. Bester, P. Sagan, I.E. Lopatynskij, R. Ciach

Publikováno v: Thin Solid Films. :318-321

Solar cell technology develops into two directions: (a) design of new architecture of devices, such as tandem cells, MIS inversion layers, and (b) searching new photovoltaic materials, such as amorphous silicon, copper indium diselenide etc. Nowadays

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b35d917300d90fd4224305f2fcf31060
https://doi.org/10.1016/j.tsf.2004.11.016

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Defects of crystal structure of Hg1−xCdxTe thin layers growing by pulsed laser deposition

Autor: M.S. Frugynskiji, I.O. Rudyj, P. Sagan, J Zawislak, Marian Kuzma, I.V. Kurilo, I. S. Virt

Publikováno v: Applied Surface Science, 208, 594-598. ELSEVIER SCIENCE BV

Hg1-xCdxTe layers have been obtained by pulsed laser deposition method using two types of lasers: YAG:Nd3+ (tau = 250 mus or 40 ns) and excimer (tau = 25 ns). The crystal structures of layers were investigated by the electron diffraction method. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a470fca0c1491ec0773e3d083af08d0
https://doi.org/10.1016/s0169-4332(02)01394-6

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Properties of HgCdTe films obtained by laser deposition on a sapphire

Autor: I. O. Rudyj, I.V. Kurilo, I. S. Virt, M. S. Frugynskyi, Ł Dumański, M Kuźma, M. Bester

Publikováno v: Applied Surface Science. 177:201-206

Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40 ns, 1 J/pulse, λ=1.06 μm) and XeCl excimer laser (25 ns, 150 mJ/pulse, λ=0.308 μm). Layers were deposited on monocrystalline and amorphous surfaces

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c426cf5bb76b9da31de6527f3e6a3aed
https://doi.org/10.1016/s0169-4332(01)00232-x

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Electron-difraction investigation of HgCdTe laser deposited films

Autor: I.O. Rudyj, M Kuźma, J Zawiślak, M. S. Frugynskyi, I.V. Kurilo, I. S. Virt

Publikováno v: Applied Surface Science. :206-210

The investigation of pulsed laser deposited (PLD) HgCdTe films structures by means of electron diffraction and transmission electron microscopy (TEM) techniques was carried out. The deposition was made on GaAs, KCl, CdTe and sapphire substrates with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a0b17226b20c5411bf9f87b4ebcd791
https://doi.org/10.1016/s0169-4332(99)00403-1

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Misfit dislocations and stresses in CdxHg1−xTe/CdTe heterojunctions

Autor: O.I. Vlasenko, I.O. Rudyi, I.V. Kurilo

Publikováno v: Journal of Crystal Growth. 204:447-452

Elastic properties and characteristics of misfit dislocations of Cd x Hg 1− x Te/CdTe heterostructures were estimated: the energy density of the film–substrate interface, the critical thickness for loss of coherency in a heterojunction, the elast

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9e52553c44281d6d77c6a0470bd6b9b
https://doi.org/10.1016/s0022-0248(99)00190-6

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Defects of the crystal structure of Hg1−Cd Te thin layer grown by pulsed laser deposition

Autor: P. Sagan, I.V Kurilo, I. O. Rudyj, I. S. Virt, J Zawislak, Marian Kuzma

Publikováno v: Journal of Alloys and Compounds. 371:180-182

Thin solid films of Hg 1− x Cd x Te on KCl substrate have been obtained by pulse laser deposition (PLD). The crystal structure of the films obtained has been investigated using electron diffraction methods (TED). The texture crystal structure of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::718d6b3e0cac99714c2484e4e664d077
https://doi.org/10.1016/j.jallcom.2003.07.037

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Photosensitivity increase of vapor-phase graded band gap CdHgTe by introduction to substrate of an isovalent impurity Mn,Zn

Autor: Z.K. Vlasenko, V.M. Babentsov, I.O. Rudyi, O.I. Vlasenko, I.V. Kurilo

Publikováno v: 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400).

By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. The increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses due to the introducti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f738a0ad73e61144839032e67aba93b5
https://doi.org/10.1109/icmel.2000.840577

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