Zobrazeno 1 - 10
of 337
pro vyhledávání: '"I.V. Grekhov"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Keping Yan, van Ejm Bert Heesch, Ajm Guus Pemen, SA Sreejit Nair, S.V. Korotkov, I.V. Grekhov
Publikováno v:
Review of Scientific Instruments, 74(10), 4361-4365. American Institute of Physics
Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::847b91c398dc6c6ee2e2ec86cc9244f9
https://doi.org/10.1063/1.1606119
https://doi.org/10.1063/1.1606119
Publikováno v:
Cryogenics. 38:613-618
We demonstrate for the first time the capability of tunnel MOS emitter transistors to operate in the temperature range from 300 K down to 4.2 K without reduction of current gain. This device suffers much less from carrier freeze out than conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06da995c64ed4425c2dbde7edd514129
https://doi.org/10.1016/s0011-2275(98)00021-6
https://doi.org/10.1016/s0011-2275(98)00021-6
Autor:
V. P. Tarakanov, A.P. Milyaev, E. F. Lebedev, A. V. Ul’yanov, I.V. Grekhov, V. M. Fedorov, V. E. Ostashev
Publikováno v:
2007 7th International Symposium on Electromagnetic Compatibility and Electromagnetic Ecology.
The high power ultra wide-band (UWB) radiators for the electromagnetic video-pulses built as assemblies by radiating modules. Each module is contained the UWB radiating antenna of a TEM-horn type and the high voltage up to 50 kV sub-nanosecond pulse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab311a5c2ddd8cc6e136bc7399627f9c
https://doi.org/10.1109/emceco.2007.4371679
https://doi.org/10.1109/emceco.2007.4371679
Autor:
L.S. Kostina, T.V. Kudravtzeva, E.I. Beliakova, E. D. Kim, I.V. Grekhov, S. C. Kim, J.M. Park, L. S. Berman
Publikováno v:
1996 54th Annual Device Research Conference Digest.
We have proposed a novel modification of silicon direct bonding (SDB) technique dealing with silicon wafers joined in such a way that a smooth surface of one wafer is attached to the grooved surface of the other. This paper presents some experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::915b635853932b4de6848b507e12d3dc
https://doi.org/10.1109/drc.1996.546314
https://doi.org/10.1109/drc.1996.546314
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
Silicon Direct Bonding (SDB) technique has been used for designing GTO with a double-layer p-base in which a net of highly doped stripes was made at the interface between the two p-type layers. The device provides a-higher (by an order of magnitude o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c817fbf8fbeaf651e2d68179a2f22a43
https://doi.org/10.1109/ispsd.1994.583729
https://doi.org/10.1109/ispsd.1994.583729
Publikováno v:
Scopus-Elsevier
Summarizes results on optimisation of parameters of Al/SiO/sub 2//n-Si tunnel structures for different device applications. The most promising device is an Auger transistor-a bipolar transistor with tunnel MIS emitter (hot electron injector) and inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d4572144b0b62b03c8142ac69deeb6a
https://doi.org/10.1109/drc.1995.496314
https://doi.org/10.1109/drc.1995.496314
Publikováno v:
Solid State Communications. 87:341-343
This article presents the analysis of the static characteristics of Si metal-insulator-semiconductor tunnel emitter Auger transistor. This study shows that there are some sharp rises of the differential current gain as a function of base-to-emitter v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6d53c1af7f8b29c8506d6e5e8249779
https://doi.org/10.1016/0038-1098(93)90656-8
https://doi.org/10.1016/0038-1098(93)90656-8