Zobrazeno 1 - 10
of 25
pro vyhledávání: '"I.S. Al-Kofahi"'
Publikováno v:
International Journal of Electrical and Computer Engineering (IJECE). 11:772
In this paper, a two-stage 0.18 μm CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz based on common source inductive degeneration with an auxiliary amplifier is proposed. In this proposal, an auxiliary amplifier is used to place the 2nd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0843a050b25139ccbc991ade50ecbef
https://doi.org/10.11591/ijece.v11i1.pp772-779
https://doi.org/10.11591/ijece.v11i1.pp772-779
Autor:
T. Zengerle, Helmut Seidel, Karin Bauer, Abdallah Ababneh, I.S. Al-Kofahi, Zaid Albataineh, B. Schäfer, A.M.K. Dagamseh
Publikováno v:
Thin Solid Films. 693:137701
Aluminum Nitride (AlN) is a well-known compound piezoelectric material with high Complementary Metal-Oxide Semiconductor process compatibility. Previous results show that the piezoelectric coefficient correlates with the c-axis orientation of AlN. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0e14aaace0ea56cdd83e8f576c3b5e
https://doi.org/10.1016/j.tsf.2019.137701
https://doi.org/10.1016/j.tsf.2019.137701
Autor:
I.S. Al-Kofahi, Y.N. Anagreh
Publikováno v:
International Journal of Modelling and Simulation. 26:175-179
This paper presents the implementation of a genetic algorithm to evaluate the performance of a self-excited induction generator under different operating conditions. Unlike with conventional methods of analysis, with the proposed method detailed math
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d17e5c375dc2016fbb7923890a6607c
https://doi.org/10.1080/02286203.2006.11442366
https://doi.org/10.1080/02286203.2006.11442366
A genetic algorithm analysis of photoluminescence experimental data from interdiffused quantum wells
Autor:
I.S. Al-Kofahi, O. M. Khreis
Publikováno v:
Superlattices and Microstructures. 37:193-201
The genetic algorithm method has been applied to analyze experimental photoluminescence data from interdiffused quantum well heterostructures. It has been shown that this method offers a direct determination of the interdiffusion activation energy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64589150feba9192ebac690a5d8633dc
https://doi.org/10.1016/j.spmi.2004.12.002
https://doi.org/10.1016/j.spmi.2004.12.002
Autor:
O. M. Khreis, I.S. Al-Kofahi
Publikováno v:
Semiconductor Science and Technology. 20:320-325
Photoluminescence experimental data from interdiffused undoped single quantum wells of GaAsSb/GaAs and InGaAs/GaAs have been analysed using a genetic algorithm method. A direct determination of the interdiffusion parameters without the need for the A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02498b0e63e8e7d8f370fa0371c96274
https://doi.org/10.1088/0268-1242/20/3/012
https://doi.org/10.1088/0268-1242/20/3/012
Publikováno v:
Scopus-Elsevier
In this paper, we consider the reliability of n-channel MOSFETs using the Substrate Hot Electron (SHE) technique. We confirm that there is a dependence of oxide degradation upon the current density during SHE injection (as previously observed by ours
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90eb6329f38725a2a8a5fa0bd9135cb1
https://doi.org/10.1016/s0026-2714(98)00074-2
https://doi.org/10.1016/s0026-2714(98)00074-2
Publikováno v:
ResearcherID
Hole injection into SiO 2 creates interface states not only during the injection, but also after the injection is terminated. This paper studies the annealing behaviour of interface states generated during and post hole injection. Interface states cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c40c77b400355e58caace38daf8b4f97
https://doi.org/10.1016/s0167-9317(97)00054-3
https://doi.org/10.1016/s0167-9317(97)00054-3
Publikováno v:
Journal of Applied Physics. 81:2686-2692
This article reports new experimental results on the continuing interface trap generation post-hot hole injection and investigates the generation mechanism. The generation post-hole injection is found to be two orders of magnitude slower than that po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4c01da0eb8de6ff31002925fcc8b6d6
https://doi.org/10.1063/1.363969
https://doi.org/10.1063/1.363969
Autor:
I.S. Al-Kofahi
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics.
Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af763de426f119240213ffe4a2162df
https://doi.org/10.1109/smelec.2008.4770363
https://doi.org/10.1109/smelec.2008.4770363
Autor:
I.S. Al-Kofahi
Publikováno v:
2005 International Conference on Microelectronics.
The damage created in p-metal-oxide-semiconductor-field-effect (p-MOSFET) transistors by hot hole injection into the oxide is investigated. It is found that hole injection creates fast interface states not only during the injection, but also after th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a67d7e1dc411994405e78060febdd8e
https://doi.org/10.1109/icm.2005.1590094
https://doi.org/10.1109/icm.2005.1590094