Zobrazeno 1 - 10
of 27
pro vyhledávání: '"I.R.C. Post"'
Publikováno v:
Journal of Applied Physics. 78:2823-2829
A comparison is made of the dc electrical characteristics of Si/Si1−xGex heterojunction bipolar transistors (HBTs) fabricated on high oxygen content material grown using molecular beam epitaxy and low oxygen content material grown using chemical va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4a6c050e613092ff7aeb4e1be28d1b
https://doi.org/10.1063/1.360082
https://doi.org/10.1063/1.360082
Autor:
I.R.C. Post, R Jackson, Peter Ashburn, J.L. Glasper, Z.A. Shafi, D.J. Robbins, A J Pidduck, W.Y. Leong
Publikováno v:
Microelectronic Engineering. 19:447-450
Transistors fabricated with systematic variations in Ge fraction, base doping and junction spacer width show near-ideal electrical characteristics. Emitter implantation generates anomalous boron diffusion in the base.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76179a23457cb7a1042cd5969aa90f2c
https://doi.org/10.1016/0167-9317(92)90472-4
https://doi.org/10.1016/0167-9317(92)90472-4
Publikováno v:
IEEE Transactions on Electron Devices. 39:1717-1731
A critical review is presented of the theories proposed in the literature to explain the current gain enhancement of polysilicon emitter bipolar transistors. From these theories a simplified analytical formulation is chosen which models the blocking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d9b796df692c1d0d61180728451e86f
https://doi.org/10.1109/16.141239
https://doi.org/10.1109/16.141239
Autor:
C.J. Gibbings, A.S.R. Martin, J. Whitehurst, I.R.C. Post, C.G. Tuppen, Z.A. Shafi, D.J. Godfrey, M.E. Jones, Peter Ashburn, G.R. Booker
Publikováno v:
Microelectronic Engineering. 15:135-138
The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acab6fc4354082491eedafe4c2f9ac1a
https://doi.org/10.1016/0167-9317(91)90198-m
https://doi.org/10.1016/0167-9317(91)90198-m
Publikováno v:
IEEE Transactions on Electron Devices. 38:1973-1976
Si/SiGe heterojunction transistors were fabricated with 21.4 nm, heavily doped (5*10/sup 19/ cm/sup -3/) bases. Electrical results from these transistors are presented, and compared with results from comparable silicon homojunction control devices. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1314a7584f571a30f20c1265d4822e
https://doi.org/10.1109/16.119045
https://doi.org/10.1109/16.119045
Autor:
I.R.C. Post, Peter Ashburn
Publikováno v:
IEEE Transactions on Electron Devices. 38:2442-2451
Ion implantation of boron into undoped polysilicon is utilized. The main goals are to characterize the diffusion of implanted boron from polysilicon, and to correlate the diffusion behavior with the electrical properties of shallow ( >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccc5b7e6983ac8ff4377804f7833116
https://doi.org/10.1109/16.97407
https://doi.org/10.1109/16.97407
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
The advantages of using full dielectric isolation, in the form of SOI substrates and trench isolation, are well known, namely the reduction of substrate parasitic currents due to high voltage, high temperature or harsh radiation environments. Moreove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81269e64b4ff8c20ad2f7b5f4cb94c22
https://doi.org/10.1109/soi.1993.344573
https://doi.org/10.1109/soi.1993.344573
Publikováno v:
Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
The use of polycrystalline silicon-carbide (SiCarb) as a wide bandgap emitter for bipolar transistors is investigated. The SiCarb is deposited in a modified LPCVD reactor with propane used as the carbon source gas, giving carbon concentrations of 4,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b27557832a2a60e5ad1baa180146e9ee
https://doi.org/10.1109/bipol.1991.160958
https://doi.org/10.1109/bipol.1991.160958
Publikováno v:
Proceedings on Bipolar Circuits and Technology Meeting.
Experimental and theoretical results on low-frequency noise of polysilicon emitter transistors are presented. Polysilicon emitter bipolar transistors were found to exhibit significantly higher 1/f noise than the equivalent metal contacted devices. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::444f2f44a5e484614d32e09ed170f6bb
https://doi.org/10.1109/bipol.1990.171172
https://doi.org/10.1109/bipol.1990.171172
Autor:
Peter Ashburn, I.R.C. Post
Publikováno v:
IEEE Electron Device Letters. 13:408-410
The effects of an interface anneal on the electrical characteristics of p-n-p polysilicon-emitter bipolar transistors are reported. For devices with a deliberately grown interfacial oxide layer, an interface anneal at 1100 degrees C leads to a factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9087891f8633ed589e31da9f1a0ba169
https://doi.org/10.1109/55.192774
https://doi.org/10.1109/55.192774